FCX1149

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999 FEATURES FCX1149A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance; RCE(sat)67m at 3A Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -30 -25 -5 -10 -3 -500 1† 2‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. 

E C B 149 FCX1149A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV V(BR)EBO ICBO IEBO ICES VCE(sat) -30 -25 -25 -25 -5 -0.3 -0.3 -0.3 -45 -100 -140 -200 -230 -930 -840 270 250 150 115 450 400 260 190 50 135 50 150 270 -100 -100 -100 -80 -170 -240 -300 -350 -1050 -1000 TYP. MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100 A IC=-100 A IC=-10mA* IC=-100 A, VEB=+1V IE=-100 A VCB=-24V VEB=-4V VCES=-20V IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-3A, IB=-100mA* IC=-4A, IB=-140mA* IC=-3A, IB=-100mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* MHz pF ns ns 2% IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB= 40mA, VCC=-10V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff  *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 




FCX1149A TYPICAL CHARACTERISTICS 1.0 +25°C 1.0 IC/IB=100 0.8 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.6 -55°C +25°C +100°C 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 750 VCE=2V 1.6 IC/IB=100 hFE - Typical Gain VBE(sat) - (V) 500 +100°C +25°C -55°C 1.2 0.8 250 0.4 -55°C +25°C +100°C 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.2 VCE=2V 10 VBE(on) - (V) 0.8 IC - Collector Current (A) 1 DC 1s 100ms 10ms 1ms 100us 0.4 -55°C +25°C +100°C 100m 0 1m 10m 100m 1 10 100 10m 100m 1 10 100 IC - Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area