FMMT2222AR-3P

FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL fT Cobo Cibo td tr ts tf Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time FMMT2222 MIN. MAX. 250 8 30 10 25 225 60 FMMT2222A MIN. MAX. 300 8 25 10 25 225 60 UNIT MHz pF pF ns ns ns ns CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off) =0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 – FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 – 1BZ FMMT2222A – 1P FMMT2222R – 2P FMMT2222AR – 3P COMPLEMENTARY TYPES FMMT2222 – FMMT2907 FMMT2222A – FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot FMMT2222 60 30 5 600 330 -55 to +150 FMMT2222A 75 40 6 UNIT V V V mA mW °C DELAY AND RISE – TEST CIRCUIT +30V Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO Generator rise time