FMMT2484

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO 7 FMMT2484 E C PARTMARKING DETAIL – 4G B SOT23 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 0.35 0.95 30 100 20 175 200 250 500 µA ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VALUE 60 60 6 200 50 330 -55 to +150 UNIT V V V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE hFE MIN. 60 60 6 CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0* IE=10µA, IC=0 VCB=45V, IE=0 VCB=45V, IE=0, Tamb=150°C VBE=5V IC=1mA, IB=100µA* IC=1mA, VCE=5V* IC=1µA, VCE=5V* IC=10µA, VCE=5V* IC=10µA, VCE=5V, Tamb=55°C IC=100µA, VCE=5V* IC=500µA, VCE=5V* IC=1mA, VCE=5V* IC=10mA, VCE=5V* VCB=5V, IE=0, f=140KHz VBE=0.5V, IE=0, f=140KHz IC=200µA, VCE=5V, Rg=2kΩ f=1kHz, f=200Hz IC=200µA, VCE=5V, Rg=2kΩ f=30Hz to 15kHz at -3dB points nA Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage Static Forward Current Transfer Ratio nA V V Output Capacitance Input Capacitance Noise Figure Cobo Cibo N 800 6 6 3 3 pF pF dB dB *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%