FMMT3905

FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL FMMT3905 MIN td tr ts tf MAX 35 35 200 60 FMMT3906 MIN MAX 35 35 225 75 ns ns ns ns VCC=-3V, VBE(off) =-0.5V IC=-10mA, IB1=-1mA (See Fig.1) VCC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2) UNIT CONDITIONS SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 4 – MARCH 2000 PARTMARKING DETAILS FMMT3905 - 2W FMMT3906 - 2A FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 FMMT3905 FMMT3906 C B E COMPLEMENTARY TYPES - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage CollectorEmitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL FMMT3905 MIN BreakdownVoltages V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICEX IBEX Static Forward Current Transfer Ratio hFE 30 40 50 30 15 -40 -40 -5 -50 -50 60 80 100 60 30 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE -40 -40 -5 -200 330 -55 to +150 UNIT V V V mA mW °C Delay and Rise Time Equivalent Test Circuit ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FMMT3906. UNIT CONDITIONS. MAX V V V -50 -50 nA nA IC=-10µ A, IE=0 IC=-1mA, IB=0* IE=-10µ A, IC=0 VCE=-30V, VBE(off) =-3V VCE=-30V, VEB(off) =-3V IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* -40 -40 -5 MAX MIN Storage and Fall Time Equivalent Test Circuit 150 300 Saturation Voltages VCE(sat) VBE(sat) -0.25 -0.4 0.25 0.4 -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V 200 4.5 10 5 250 4.5 10 4 Transition Frequency Input Capacitance Noise Figure fT MHz IC=-10mA, VCE=-20V f=100MHz pF pF dB VCB=-5V, IE=0, f=100KHz VBE=0.5V, IC=0, f=100KHz IC=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points Output Capacitance Cobo Cibo N *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% PAGE NUMBER PAGE NUMBER FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL FMMT3905 MIN td tr ts tf MAX 35 35 200 60 FMMT3906 MIN MAX 35 35 225 75 ns ns ns ns VCC=-3V, VBE(off) =-0.5V IC=-10mA, IB1=-1mA (See Fig.1) VCC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2) UNIT CONDITIONS SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 – NOVEMBER 1995 PARTMARKING DETAILS 7 FMMT3905 - 2W FMMT3906 - 2A FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 FMMT3905 FMMT3906 C B E COMPLEMENTARY TYPES - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage CollectorEmitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL FMMT3905 MIN BreakdownVoltages V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICEX IBEX Static Forward Current Transfer Ratio hFE 30 40 50 30 15 -40 -40 -5 -50 -50 60 80 100 60 30 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE -40 -40 -5 -200 330 -55 to +150 UNIT V V V mA mW °C Delay and Rise Time Equivalent Test Circuit ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FMMT3906. UNIT CONDITIONS. MAX V V V -50 -50 nA nA IC=-10µ A, IE=0 IC=-1mA, IB=0* IE=-10µ A, IC=0 VCE=-30V, VBE(off) =-3V VCE=-30V, VEB(off) =-3V IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* -40 -40 -5 MAX MIN Storage and Fall Time Equivalent Test Circuit 150 300 Saturation Voltages VCE(sat) VBE(sat) -0.25 -0.4 0.25 0.4 -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V 200 4.5 10 5 250 4.5 10 4 Transition Frequency Input Capacitance Noise Figure fT MHz IC=-10mA, VCE=-20V f=100MHz pF pF dB VCB=-5V, IE=0, f=100KHz VBE=0.5V, IC=0, f=100KHz IC=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points Output Capacitance Cobo Cibo N *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% PAGE NUMBER PAGE NUMBER