FMMT4402-2K

FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER Turn-On Time Turn-Off Time SYMBOL ton t off MIN. MAX. 35 255 UNIT ns ns CONDITIONS VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2) SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR ISSUE 2 - MARCH 1995 7 FMMT4402 FMMT4403 C B E PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMT4402 MIN. -40 -40 -5 -0.1 -0.1 30 50 50 20 30 60 100 100 20 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg FMMT4403 MIN. -40 -40 -5 -0.1 -0.1 VALUE -40 -40 -5 -600 330 -55 to +150 UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Current Collector-Emitter Cut-Off Current Base Cut-Off Current Static Forward Current TransferRatio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBEX hFE MAX. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC=-500mA,VCE=-2V* IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA* IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA VCE(sat) VBE(sat) fT Cobo Cibo -0.75 150 -0.95 -1.3 -0.75 200 -0.95 -1.3 MHz IC=-20mA,VCE=-10V f=100MHz 8.5 30 pF VCB=-10 V,IE=0 f=100kHz pF VBE=0.5V IC=0, f=100kHz 8.5 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER PAGE NUMBER FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER Turn-On Time Turn-Off Time SYMBOL ton t off MIN. MAX. 35 255 UNIT ns ns CONDITIONS VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2) SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR ISSUE 2 - MARCH 1995 7 FMMT4402 FMMT4403 C B E PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMT4402 MIN. -40 -40 -5 -0.1 -0.1 30 50 50 20 30 60 100 100 20 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg FMMT4403 MIN. -40 -40 -5 -0.1 -0.1 VALUE -40 -40 -5 -600 330 -55 to +150 UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Current Collector-Emitter Cut-Off Current Base Cut-Off Current Static Forward Current TransferRatio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBEX hFE MAX. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC=-500mA,VCE=-2V* IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA* IC=-150mA,IB=-15mA* IC=-500mA,IB=-50mA VCE(sat) VBE(sat) fT Cobo Cibo -0.75 150 -0.95 -1.3 -0.75 200 -0.95 -1.3 MHz IC=-20mA,VCE=-10V f=100MHz 8.5 30 pF VCB=-10 V,IE=0 f=100kHz pF VBE=0.5V IC=0, f=100kHz 8.5 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER PAGE NUMBER