FMMT449

FMMT449 TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A FMMT449 C B E IB1=IB2=IC/10 VCE=10V 0.8 ns 150 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts ns FMMT549 449 - (Volts) 0.6 IC/IB=10 tf Switching time 100 tr 0.4 800 td 50 ts tr ts 0 0.01 0.1 td 1 tf 600 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT VALUE 50 30 5 2 1 200 500 -55 to +150 CONDITIONS. UNIT V V V A A mA mW °C V 0.2 400 200 0 0.001 0.01 0 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.8 1.6 160 VCE=2V 1.4 1.2 IC/IB=10 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.0 70 100 80 40 150 15 300 MHz pF V V V µA µA µA 120 1.0 0.8 0.6 80 IC=1mA, IE=0 IC=10mA, IB=0* IE=100µ A, IC=0 VCB=40V, IE=0 VCB=40V, Tamb=100°C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=10V f=100mHz VCB=10V, f=1MHz h V 40 0.4 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE hFE v IC VBE(sat) v IC 1.8 10 I -Collector Current (A) 1.6 1.4 V V V V - (Volts) 1.2 1.0 0.8 0.6 VCE=2V 1 DC 1s 100ms 10ms 1ms 100 0.1 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 1 10 100 µs V 0.4 0.2 0.001 0.01 0.1 1 10 + 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Transition Frequency Output Capacitance fT Cobo VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 106 3 - 107 FMMT449 TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A FMMT449 C B E IB1=IB2=IC/10 VCE=10V 0.8 ns 150 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts ns FMMT549 449 - (Volts) 0.6 IC/IB=10 tf Switching time 100 tr 0.4 800 td 50 ts tr ts 0 0.01 0.1 td 1 tf 600 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT VALUE 50 30 5 2 1 200 500 -55 to +150 CONDITIONS. UNIT V V V A A mA mW °C V 0.2 400 200 0 0.001 0.01 0 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.8 1.6 160 VCE=2V 1.4 1.2 IC/IB=10 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.0 70 100 80 40 150 15 300 MHz pF V V V µA µA µA 120 1.0 0.8 0.6 80 IC=1mA, IE=0 IC=10mA, IB=0* IE=100µ A, IC=0 VCB=40V, IE=0 VCB=40V, Tamb=100°C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=10V f=100mHz VCB=10V, f=1MHz h V 40 0.4 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE hFE v IC VBE(sat) v IC 1.8 10 I -Collector Current (A) 1.6 1.4 V V V V - (Volts) 1.2 1.0 0.8 0.6 VCE=2V 1 DC 1s 100ms 10ms 1ms 100 0.1 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 1 10 100 µs V 0.4 0.2 0.001 0.01 0.1 1 10 + 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Transition Frequency Output Capacitance fT Cobo VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 106 3 - 107