FMMT459TC

FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE(sat) = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state losses at 450V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. FEATURES • • • • • • • • • Low Saturation Voltage - 90mV @ 50mA Hfe Min 50 @ 30 mA IC=150mA Continuous SOT23 package with Ptot 625mW Specification can be supplied in larger package outlines SOT23 APPLICATIONS Electronic test equipment Off line switching circuits Piezo Actuators. RCD circuits. E C B TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ORDERING INFORMATION DEVICE FMMT459TA FMMT459TC REEL SIZE (inches) 7 13 DEVICE MARKING 459 ISSUE 2 - DECEMBER 2001 1 FMMT459 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 500 450 5 500 150 200 625 5 806 6.4 -55 to +150 UNIT V V V mA mA mA mW mW/°C mW mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 2 - DECEMBER 2001 2 FMMT459 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) H FE fT C OBO t (on) t (off) 113 3450 50 50 5 60 70 .76 .71 120 70 MHz PF MIN. 500 450 5 TYP. 700 500 8 MAX. UNIT V V V CONDITIONS I C = 100 µ A I C = 10mA* I E = 100 µ A V CB = 450V V EB = 5V V CE = 450V I C = 20mA, I B = 2mA* I C = 50mA, I B = 6mA* I C = 50mA, I B = 5mA* I C = 50mA, V CE = 10V* I C = 30mA, V CE = 10V* I C = 50mA, V CE = 10V* I C = 10mA, V CE = 20V F = 20MH Z V CB = 20V, f = 1MH Z I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA 100 100 100 75 90 .9 .9 nA nA nA mV mV V V ns ns *Measured under plused conditions. Pulse width = 300µs. Dury cycle