FMMT493ATA

FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE(SAT) = 0.5V @1A C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring improved circuit efficiencies. E B SOT23 Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications · Various driving functions including:- Motors - Actuators - Soleniod & Relays · Backlight Inverters. · DC_DC Modules. E Device Reel Size (inches) FMMT493ATA FMMT493ATC 7 13 Tape Width (mm) 8mm embossed 8mm embossed Quantity Per Reel 3000 units 10000 units C B TOP VIEW ISSUE 1 - OCTOBER 2001 1 FMMT493A ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). PARAMETER Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base Emitter Turn On Voltage Static Forward Current Transfer Ratio I CBO I CES I EBO V CE(SAT) 100 100 100 0.25 0.5 V BE(SAT) V BE(ON) h FE 300 500 300 100 20 Transition Frequency fT 150 Mhz 1200 1.15 1.0 nA nA nA V V V V V CB = 45V V CES = 45V V EB = 4V I C = 500mA, I B = 50mA I C = 1A, I B = 100mA I C =1A, I B = 100mA I C = 1A, V CE - 10V I C = 1mA, V CE = 10V I C = 150mA, V CE = 10V I C = 250mA, V CE = 10V I C = 500mA, V CE = 10V I C = 1A, V CE = 10V I C = 50mA, V CE = 10V f = 100MHz Collector - Base Breakdown Voltage C OBO 10 pF V CB = 10V, f = 1MHz SYMBOL V (BR)CBO V CEO(SUS) V (BR)EBO MIN. 120 60 5 MAX. UNIT V V V CONDITIONS. I C = 100 A I C = 10mA* I E = 100 A *Measured under pulsed conditions. Pulse width = 300 s. Duty Cycle