FMMT5087

SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAIL FMMT5087 - 2m FMMT5087R - 3m FMMT5088 FMMT5087 C B E COMPLEMENTARY TYPE - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot VALUE -50 -50 -3 -100 330 -55 to +150 UNIT V V V mA mW °C Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL ICBO MIN. MAX. Collector-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Static Forward Current Transfer Ratio Transition Frequency -10 -50 -50 -300 -850 250 250 250 40 250 900 2 4 dB pF 800 nA µA nA mV mV UNIT CONDITIONS. VCB=-10V, IE=0 VCB=-35V, IE=0 VEB=-3V, IC=0 IC=-10mA, IB=-1mA IC=-1mA, VCE=-5V IC=-100µ A, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V* Emitter-Base Current IEBO VCE(sat) VBE(on) hFE fT MHz IC=-500µ A, VCE=-5V f=20MHz IC=-1mA, VCE=-5V f=1KHz IC=200µ A, VCE=-5V, Rg=2KΩ f=30Hz to 15KHz at 2dB points VCB=-5V, f=140MHz, IE=0 Small Signal Current hfe Transfer Ratio Noise Figure Output Capacitance N Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device