FMMT5089

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL— FMMT5088 - 1Q FMMT5089 - 1R FMMT5088 FMMT5089 C B FMMT5088 FMMT5089 35 30 4.5 50 330 30 25 4.5 50 330 UNIT V V V mA mW °C E COMPLEMENTARY TYPES — FMMT5088 - FMMT5087 FMMT5089 - None Available ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot Operating and Storage Temperature Range Tj:Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMT5088 35 30 50 50 0.5 0.8 300 350 300 50 4 10 3 350 1400 450 900 400 450 400 50 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector- Base Cut-Off Current Emitter-Base Current Emitter Saturation Voltages Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Emitter-base Capacitance Noise Figure SYMBOL V(BR)CBO V(BR)CEO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo Cebo N MIN. MAX. MIN. 25 30 FMMT5089 MAX. UNIT V V 50 100 0.5 0.8 1200 MHz 4 10 2 1800 pF pF dB nA nA nA nA V V CONDITIONS. IC=1mA, IB=0 IC=100µ A,IE=0* VCB=20V, IE=0 VCB=15V, IE=0 VEB(off)=3V, IC=0 VEB(off)=4.5V, IC=0 IC=10mA, IB=1mA IC=100µ A, VCE=5V IC=1mA, VCE=5V IC=10mA, VCE=5V IC=500µ A, VCE=5V f=20MHz VCB=5V, f=1MHz, IE=0 VBE=0.5V, f=1MHz, IC=0 IC=200mA, VCE=5V, Rg=10KΩ , f=10Hz to 15KHz IC=1mA, VCE=5V f=1KHz ++ Small Signal Current hfe Transfer Ratio *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ++ Periodic Sample test Only Spice parameter data is available upon request for this device Page Number