FMMT5210

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JULY 1995 PARTMARKING DETAILS: FMMT5209 - 2Q FMMT5210 - 2R 7 FMMT5209 FMMT5210 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg FMMT5210 MAX. 50 50 700 850 200 250 250 30 600 3 4 Output Capacitance Cobo 4 250 900 2 3 4 MHz MHz dB dB pF 600 FMMT5209 50 50 4.5 50 330 -55 TO +150 SOT23 FMMT5210 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Cut-Off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Static Forward Current Transfer Ratio SYMBOL ICBO IEBO VCE(sat) VBE(on) hFE 100 150 150 30 150 FMMT5209 MIN. 50 50 700 850 300 MAX. MIN. UNIT CONDITIONS. nA nA mV mV VCB=35V, IE=0 VEB=3V, IC=0 IC=10mA, IB=1mA IC=1mA, VCE=5V IC=100µA, VCE=5V IC=1mA, VCE=5V IC=10mA, VCE=5V* IC=0.5mA, VCE=5V, f=20MHz IC=1mA, VCE=5V, f=1KHz IC=200µA, VCE=5V, Rg=2KΩ, f=30Hz to 15KHz at -3dB points IC=200µA, VCE=5V, Rg=2KΩ, f=1KHz to ∆f=200Hz VCB=5V, IE=0, f=140KHz Transition Frequency fT Small Signal Current hfe Transfer Ratio Noise Figure N