FMMT549

FMMT549 FMMT549A TYPICAL CHARACTERISTICS td,tr,tf (ns) 180 0.8 160 140 IB1=IB2=IC/10 ts (ns) 1800 1600 1400 tr 1200 1000 td 800 600 400 tf 200 1 0 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current COMPLEMENTARY TYPES – FMMT549 - FMMT449 FMMT549A - N/A PARTMARKING DETAIL – FMMT549 - 549 FMMT549A - 59A FMMT549 FMMT549A C B E - (Volts) 0.6 120 Switching time 100 80 60 40 20 ts 0.4 IC/IB=100 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation: at Tamb=25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg TYP. MAX. VALUE -35 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.25 -0.50 -0.9 -0.85 70 80 40 100 150 fT Cobo ton 50 100 25 200 130 80 160 200 300 500 MHz pF ns -0.50 -0.75 -0.30 VBE(sat) Base Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE -1.25 -1 µA µA µA V 0.2 IC/IB=10 UNIT V V V A A mA mW °C 0 0.01 0.1 1 10 0 0.01 0.1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.4 160 1.2 Operating and Storage Temperature Range IC/IB=100 IC/IB=10 120 - (Volts) - Gain VCE=2V 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO 0.01 0.1 1 10 MIN. -35 -30 -5 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA 80 h 0.8 V 0.6 40 0.001 0.01 0.1 1 10 Cut-Off Currents ICBO IEBO I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse T est at Tamb=25°C Saturation Voltages FMMT549A VCE(sat) V V V V V 10 1.0 IC/IB=10 - (Volts) 0.9 1 DC 1s 100ms 10ms 1ms 100µs 0.8 0.7 0.1 FMMT549 FMMT549A V 0.6 Transition Frequency 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 Output Capacitance Switching Times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 300 ns toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 127 3 - 128 FMMT549 FMMT549A TYPICAL CHARACTERISTICS td,tr,tf (ns) 180 0.8 160 140 IB1=IB2=IC/10 ts (ns) 1800 1600 1400 tr 1200 1000 td 800 600 400 tf 200 1 0 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current COMPLEMENTARY TYPES – FMMT549 - FMMT449 FMMT549A - N/A PARTMARKING DETAIL – FMMT549 - 549 FMMT549A - 59A FMMT549 FMMT549A C B E - (Volts) 0.6 120 Switching time 100 80 60 40 20 ts 0.4 IC/IB=100 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation: at Tamb=25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg TYP. MAX. VALUE -35 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.25 -0.50 -0.9 -0.85 70 80 40 100 150 fT Cobo ton 50 100 25 200 130 80 160 200 300 500 MHz pF ns -0.50 -0.75 -0.30 VBE(sat) Base Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE -1.25 -1 µA µA µA V 0.2 IC/IB=10 UNIT V V V A A mA mW °C 0 0.01 0.1 1 10 0 0.01 0.1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.4 160 1.2 Operating and Storage Temperature Range IC/IB=100 IC/IB=10 120 - (Volts) - Gain VCE=2V 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO 0.01 0.1 1 10 MIN. -35 -30 -5 CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA 80 h 0.8 V 0.6 40 0.001 0.01 0.1 1 10 Cut-Off Currents ICBO IEBO I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse T est at Tamb=25°C Saturation Voltages FMMT549A VCE(sat) V V V V V 10 1.0 IC/IB=10 - (Volts) 0.9 1 DC 1s 100ms 10ms 1ms 100µs 0.8 0.7 0.1 FMMT549 FMMT549A V 0.6 Transition Frequency 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 Output Capacitance Switching Times I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 300 ns toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 127 3 - 128