FMMT555_03

FMMT555 TYPICAL CHARACTERISTICS ZTX 554/55-2 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current IB1=IB2=IC/10 tf ns 1000 800 tf 600 td ns 400 100 td 100 1 0 -0.01 tr -0.1 -1 200 0 50 0 FMMT555 C FMMT455 B 555 SOT23 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -160 -150 -5 -2 -1 -200 500 -55 to +150 E -0.8 IC/IB=10 tr ns 500 ts µs 5 4 3 2 ts COMPLEMENTARY TYPE – PARTMARKING DETAIL – VCE(sat) - (Volts) -0.6 Switching time 400 300 200 -0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage -0.2 UNIT V V V A A mA mW °C 0 -0.0001 -0.001 -0.01 -0.1 -1 0 IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current VCE(sat) v IC Switching Speeds 100 -1.4 Base Current Power Dissipation at Tamb = 25°C hFE - Normalised Gain (%) 80 -1.2 IC/IB=10 Operating and Storage Temperature Range 60 40 VBE(sat) - (Volts) VCE=-10V -1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage -0.0001 -0.001 -0.01 -0.1 -1 -0.8 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo MIN. -160 -150 -5 MAX UNIT V V V CONDITIONS. IC=-100 A IC=-10mA* IE=-100 A VCB =-140V VCB =-140V, Tamb =100°C VEB=-4V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-10V* IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 20 0 -0.6 -0.0001 -0.001 -0.01 -0.1 1 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C -1.4 10 IC-Collector Current (A) -1.2 VCE=-10V 1 Collector-Emitter Saturation Voltage DC 1s 100ms 10ms 1ms 100 s -0.3 -1 -1 50 50 100 10 VBE - (Volts) -1.0 0.1 Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage 10V 100V 1000V -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -1 0.001 0.1V 1V IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 132 3 - 131 

0.01 Static Forward Current Transfer Ratio Transition Frequency Output Capacitance 300 MHz pF * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device
Emitter Cut-Off Current -0.1

-0.1 -10 A A A V V V IC=-50mA, VCE =-10V f=100MHz VCB =-10V, f=1MHz
IC - Collector Current (Amps) IC - Collector Current (Amps)
FMMT555 TYPICAL CHARACTERISTICS ZTX 554/55-2 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – JANUARY 1996 FEATURES * 150 Volt VCEO * 1 Amp continuous current IB1=IB2=IC/10 tf ns 1000 800 tf 600 td ns 400 100 td 100 1 0 -0.01 tr -0.1 -1 200 0 50 0 FMMT555 C FMMT455 B 555 SOT23 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -160 -150 -5 -2 -1 -200 500 -55 to +150 E -0.8 IC/IB=10 tr ns 500 ts µs 5 4 3 2 ts COMPLEMENTARY TYPE – PARTMARKING DETAIL – VCE(sat) - (Volts) -0.6 Switching time 400 300 200 -0.4 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage -0.2 UNIT V V V A A mA mW °C 0 -0.0001 -0.001 -0.01 -0.1 -1 0 IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current VCE(sat) v IC Switching Speeds 100 -1.4 Base Current Power Dissipation at Tamb = 25°C hFE - Normalised Gain (%) 80 -1.2 IC/IB=10 Operating and Storage Temperature Range 60 40 VBE(sat) - (Volts) VCE=-10V -1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage -0.0001 -0.001 -0.01 -0.1 -1 -0.8 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo MIN. -160 -150 -5 MAX UNIT V V V CONDITIONS. IC=-100 A IC=-10mA* IE=-100 A VCB =-140V VCB =-140V, Tamb =100°C VEB=-4V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-10V* IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 20 0 -0.6 -0.0001 -0.001 -0.01 -0.1 1 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C -1.4 10 IC-Collector Current (A) -1.2 VCE=-10V 1 Collector-Emitter Saturation Voltage DC 1s 100ms 10ms 1ms 100 s -0.3 -1 -1 50 50 100 10 VBE - (Volts) -1.0 0.1 Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage 10V 100V 1000V -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -1 0.001 0.1V 1V IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 132 3 - 131 

0.01 Static Forward Current Transfer Ratio Transition Frequency Output Capacitance 300 MHz pF * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for this device
Emitter Cut-Off Current -0.1

-0.1 -10 A A A V V V IC=-50mA, VCE =-10V f=100MHz VCB =-10V, f=1MHz
IC - Collector Current (Amps) IC - Collector Current (Amps)