FMMT618

SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723 – PARTMARKING 617 618 619 624 625 RCE(sat) 50mΩ at 3A 50mΩ at 2A 75mΩ at 2A - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW °C Operating and Storage Temperature Tj:Tstg Range * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT619 TYPICAL CHARACTERISTICS 1 +25°C FMMT624 FMMT625 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage 1mA 10mA 100mA 1A 10A 10A 0.6 100m 0.4 10m I+/I*=40 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(SAT) FMMT624 MIN. 125 125 TYP. 250 160 150 150 5 100 100 100 26 70 160 165 50 150 220 250 1.0 1.0 200 300 30 100 15 FMMT625 TYP. 300 175 8.3 MAX. MAX. MIN. UNIT CONDITIONS. V V V nA nA nA nA nA mV mV mV mV mV V V IC=100µA IC=10mA* IE=100µA VCB=100V VCB=130V VEB=4V VCES=100V VCES=130V IC=0.1A, IB=10mA* IC=0.1A, IB=1mA* IC=0.5A, IB=50mA* IC=0.5A, IB=10mA* IC=1A, IB=50mA* IC=1A, IB=50mA* IC=1A, VCE=10V* IC=10mA, VCE=10V* IC=0.2A, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=50V, IC=0.5A IB1=-IB2=50mA 100°C 25°C -55°C I+/I*=100 I+/I*=50 I+/I*=10 0.2 5 8.3 1m 1m 10m 100m 1 10 0.0 Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage 100 100 IC - Collector Current (A) Collector Current VCE(sat) v IC 1.2 450 25°C VCE(SAT) vs IC 100 26 110 180 0.85 0.74 400 450 45 15 135 6 160 1500 10 50 200 300 1.0 1.0 1.2 1.0 0.8 0.6 0.4 0.2 100°C V+-=2V I+/I*=40 1.0 0.8 0.6 -55°C 25°C 100°C -55°C 225 0.4 0.2 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON) hFE 200 300 100 100 0.85 0.7 400 450 140 18 155 0.0 1mA 10mA 100mA 1A 0 10A 0.0 1mA 10mA 100mA 1A 10A Collector Current Collector Current Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time HFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C fT COBO t(ON) t(OFF) 7 60 1300 pF ns ns 1.0 0.8 0.6 0.4 0.2 V+- =2V -55°C 1.0 Turn-Off Time D.C. 1s 100ms 10ms 1ms 100µs 25°C *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 100°C 0.1 0.0 1mA 10mA 100mA 1A 10A 0.01 0.1 1 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC 3 - 154 Safe Operating Area 3 - 155 FMMT624 TYPICAL CHARACTERISTICS 25 °C I+/I *=20 FMMT625 TYPICAL CHARACTERISTICS 0.5 0.4 0.3 0.2 0.1 1mA 10mA 100mA 1A 10A 0.0 1mA 10mA 100mA 1A 10A I+/I*=100 I+/I*=20 I+/I*=10 25 °C I+/I*=20 0.5 0.4 0.3 0.2 0.1 0.0 1mA 10mA 100mA 1A 10A I+/I* =50 I+/I* =20 I+/I* =10 0.5 0.4 0.3 100°C 0.5 0.4 0.3 100°C 0.2 0.1 0.0 25°C -55°C 0.2 0.1 0.0 1mA 25°C -55°C Collector Current Collector Current 10mA 100mA 1A 10A VCE(SAT) vs IC 1.0 1.2 100°C V+- =10V VCE(SAT) vs IC Collector Current Collector Current VCE(SAT) vs IC 1.0 I+ /I* =20 VCE(SAT) vs IC I+/I*=20 -55°C 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A -55°C 25°C 450 0.8 0.6 1.2 1.0 0.8 0.6 100°C V+-=10V 25°C 450 25°C 0.8 0.6 -55°C 25°C 100°C 100°C 225 0.4 0.2 0.0 -55°C 0.4 0.2 225 0.4 0.2 0.0 1mA 10A 1mA 10mA 100mA 1A 10A Collector Current Collector Current 0.0 1mA 10mA 100mA 1A 10A 10mA 100mA 1A 10A hFE vs IC 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 10A 0.01 1.0 -55°C VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C Collector Current Collector Current hFE vs IC 10 V+- =10V VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C V+- =10V 1.0 1.0 0.8 0.6 0.1 D.C. 1s 100ms 10ms 1ms -55°C 1.0 25°C 100°C 25°C 100°C 0.4 0.2 10 100 1000 0.0 1mA 0.1 D.C. 1s 100ms 10ms 100µs Collector Current VCE (VOLTS) 10mA 100mA 1A 10A 0.01 1ms 100µs 1 10 100 1000 VBE(ON) vs IC 3 - 156 Safe Operating Area Collector Current VCE (VOLTS) VBE(ON) vs IC 3 - 157 Safe Operating Area FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158