FMMT717

SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059 NOM 0.075 0.0004 0.004 0.0825 0.0985 NOM 0.37 ISSUE 3 JUNE 1996 FEATURES FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 * * * * * * 625mW POWER DISSIPATION C B E IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 COMPLEMENT FMMT617 FMMT618 FMMT619 – FMMT624 PARTMARKING 717 718 720 722 723 RCE(sat) 72mΩ at 2.5A 97mΩ at 1.5A 163mΩ at 1.5A - ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide ©Zetex plc 1997 Internet: http://www.zetex.com SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg FMMT 717 -12 -12 -5 -10 -2.5 FMMT 718 -20 -20 -5 -6 -1.5 FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150 FMMT 722 -70 -70 -5 -3 -1.5 FMMT 723 -100 -100 -5 -2.5 -1 UNIT V V V A A mA mW °C Operating and Storage Temperature Range *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 3 - 159 FMMT720 TYPICAL CHARACTERISTICS 1 +25°C FMMT722 FMMT723 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER I+/I*=20 0.6 SYMBOL FMMT722 MIN. -70 -70 TYP. -150 -125 -100 -100 -5 -100 -100 -100 -35 -135 -140 -175 -50 -200 -220 -260 -1.05 -1.0 300 300 250 FMMT723 TYP. -200 -160 -8.8 MAX. MAX. MIN. UNIT CONDITIONS. V V V nA nA nA nA nA mV mV mV mV mV mV V V IC =-100µA IC =-10mA* IE=-100µA VC B=-60V VC B=-80V VEB=-4V VC ES=-60V VC ES=-80V IC =-0.1A, IB=-10mA* IC =-0.5A, IB=-20mA* IC =-0.5A, IB=-50mA* IC =-1A, IB=-100mA* IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* IC =-10mA, VC E=-5V* IC =-10mA, VC E=-10V* IC =-0.1A, VC E=-5V* IC =-0.1A, VC E=-10V* IC =-0.5A, VC E=-10V* IC =-1A, VC E=-5V* IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* IC =-1.5A, VC E=-10V* IC =-3A, VC E=-5V* MHz IC =-50mA, VC E=-10V f=100MHz VC B=-10V, f=1MHz VC C =-50V, IC =-0.5A IB1 =IB2 =-50mA 0.4 100m I+/I*=50 I+/I*=20 I+/I*=10 -55°C Collector-Base V(BR) CBO Breakdown Voltage 100°C 25°C Collector-Emitter V(BR) CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage 0.2 -5 -8.8 10m 1m 0.0 10m 100m 1 10 1mA 10mA 100mA 1A 10A Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage IC BO IEBO IC ES VC E( sat) -100 -100 IC - Collector Current (A) Collector Current VCE(SAT) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 0 10A -55°C 25°C 100°C I+/I*=10 VCE(SAT) vs IC -100 -50 -125 -210 -0.89 -0.71 -80 -200 -330 -1.0 -1.0 V+-=2V 1.0 0.8 450 0.6 0.4 0.2 0.0 -55°C 25°C 100°C 225 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 1mA 10mA 100mA 1A 10A VBE( sat) VBE(on) hFE 300 300 175 40 -0.94 -0.78 470 450 275 60 10 Collector Current Collector Current Static Forward Current Transfer Ratio 475 450 375 250 30 hFE vs IC 1.0 0.8 0.6 0.4 0.2 0.0 1mA 0.01 0.1 VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C V+-=2V -55°C 25°C 100°C 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100µs Transition Frequency fT 150 200 150 20 200 13 50 760 20 Output Capacitance Cob o Turn-On Time Turn-Off Time 1.0 10 100 14 40 700 pF ns ns t(on) t(off) 10mA 100mA 1A 10A *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 164 3 - 165 FMMT722 TYPICAL CHARACTERISTICS 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1mA 10mA 100mA 1A 10A I+/I*=50 I+/I*=20 I+/I*=10 I+/I*=5 25°C FMMT718 TYPICAL CHARACTERISTICS 1 I+/I*=10 0.6 0.5 0.4 0.3 0.2 0.1 +25°C 0.6 0.5 I+/I*=30 100m 0.4 0.3 100°C 25°C -55°C 100°C 25°C -55°C 10m I+/I*=50 I+/I*=30 I+/I*=10 0.2 0.1 0.0 10 1mA 10mA 0.0 1mA 10mA 100mA 1A 10A 1m 1m 10m 100m 1 100mA 1A 10A Collector Current Collector Current IC - Collector Current (A) Collector Current VBE(SAT) vs IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A -55°C 25°C 100°C VCE(SAT) vs IC 1.2 1.0 450 0.8 0.6 225 0.4 0.2 0.0 1mA -55°C 25°C 100°C VCE(SAT) v IC VCE(SAT) vs IC V+-=5V I+/I*=5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10mA 100mA 1A 10A 100°C V+-=2V 1.4 1.2 450 1.0 0.8 I+/I*=10 25°C -55°C 25°C 100°C -55°C 225 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 0 10A 0.0 1mA 10mA 100mA 1A 10A Collector Current Collector Current Collector Current Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.2 1.0 V+-=2V hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.0 0.8 0.6 0.4 0.2 V+-=5V -55°C 25°C 1.0 0.8 D.C. 1s 100ms 10ms 1ms 100µs -55°C 25°C 1.0 0.6 0.4 0.2 100°C 100°C 0.1 0.1 D.C. 1s 100ms 10ms 1ms 100µs 0.0 1mA 10mA 100mA 1A 10A 0.01 0.1 1 10 100 0.0 1mA 10mA 100mA 1A 10A 0.01 0.1 1.0 10 100 Collector Current VCE (VOLTS) Collector Current VCE (VOLTS) VBE(ON) vs IC 3 - 166 Safe Operating Area VBE(ON) vs IC Safe Operating Area 3 - 163 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158