FMMTA06

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 5 – MARCH 2001 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA PARTMARKING DETAIL – FMMTA06 – 1G FMMTA06R – MA FMMTA06 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j:T stg VALUE 80 80 4 500 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Transition Frequency V (BR)CEO V (BR)EBO I CES I CBO h FE V CE(sat) V BE(on) fT 100 50 50 0.25 1.2 V V MHz 80 4 0.1 0.1 VALUE MAX. V V I C=1mA* I E=100 µ A V CES=60V V CB=80V I C=10mA, V CE=1V* I C=100mA, V CE=1V* I C=100mA, I B=10mA* I C =100mA, V CE=1V* I C=10mA, V CE=2V f=100MHz UNIT CONDITIONS. µA µA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device TBA