FXT38C

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp FXT38C B C E REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg 80 60 10 2 E-Line TO92 Compatible VALUE UNIT V V V A mA W °C 800 1 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 80 60 10 100 100 1.25 1.8 5000 10000 TYP. MAX. UNIT V V V nA nA V V CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* 3-29 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) VBE(on) Static Forward Current hFE Transfer Ratio * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%