FXT549

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT549 REFER TO ZTX549 FOR GRAPHS B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -35 -30 -5 -2 -1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -35 -30 -5 -0.1 -10 -0.1 -0.25 -0.50 -0.90 -0.85 70 100 80 40 100 25 200 160 130 80 -0.50 -0.75 -1.25 -1 300 MHz pF TYP. MAX. UNIT V V V µA µA µA CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V, IC=0 IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Frequency fT Cobo * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-36