FXT555

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT555 B C E REFER TO ZTX555 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -160 -150 -5 -2 -1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -160 -150 -5 -0.1 -0.1 -0.3 -1 -1 50 50 100 10 3-40 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-140V VEB=-4V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo 300 MHz pF IC=-50mA, VCE=-10V* f=100MHz VCE=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%