FXT649

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 25 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt APPLICATIONS * Motor driver REFER TO ZTX649 FOR GRAPHS FXT649 B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 35 25 5 6 2 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 35 25 5 0.1 10 0.1 0.12 0.23 0.9 0.8 70 100 75 15 150 50 200 200 150 50 0.3 0.5 1.25 1 300 MHz pF TYP. MAX. UNIT V V V µA µA µA CONDITIONS. IC=100µ A, IE=0 IC=10mA, IB=0* IE=100µ A, IC=0 VCB=30V, IE=0 VCB=30V,T amb =100°C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3-46