FXT757

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt FXT757 B C E REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -300 -300 -5 -1 -0.5 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -300 -300 -5 -100 -100 -0.5 -1.0 -1.0 40 50 30 20 TYP. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage MAX. UNIT V V V nA nA V V V CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo MHz pF IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-60