FZT649

FZT649 TYPICAL CHARACTERISTICS 0.8 200 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 4– FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A COMPLEMENTARY TYPE – 100 FZT649 C V + -=2V E C B - (Volts) - Gain 0.6 I+ /I* =10 FZT749 FZT649 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 35 25 5 8 3 2 -55 to +150 UNIT V V V 0.1 10 0.1 0.3 0.6 1.25 1.0 300 MHz 50 pF ns ns µA µA µA 0.4 PARTMARKING DETAIL – PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current h V 0.2 ABSOLUTE MAXIMUM RATINGS. 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 0 UNIT V V V A A W °C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 2.0 1.2 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL MIN. 35 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 25 5 - (Volts) - (Volts) 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V+ -=2V IC/IB=10 1.0 V V 0.8 CONDITIONS. IC=100µA IC=10mA* IE=100µA 0.6 0.4 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse T est at Tamb=25°C td tr tf ns VBE(on) v IC IB1=IB2=IC/10 0.12 0.40 0.9 0.8 200 200 150 50 240 25 55 300 V V V V 140 VCB=30V VCB=30V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA 1 Switching time 120 td ts ns 100 tr 1000 80 tf 800 0.1 DC 1s 100ms 10ms 1ms 100µs 60 ts 40 600 400 20 200 0.01 0 0.01 0.1 1 0 fT Cobo ton toff 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 206 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 205 FZT649 TYPICAL CHARACTERISTICS 0.8 200 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 4– FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A COMPLEMENTARY TYPE – 100 FZT649 C V + -=2V E C B - (Volts) - Gain 0.6 I+ /I* =10 FZT749 FZT649 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 35 25 5 8 3 2 -55 to +150 UNIT V V V 0.1 10 0.1 0.3 0.6 1.25 1.0 300 MHz 50 pF ns ns µA µA µA 0.4 PARTMARKING DETAIL – PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current h V 0.2 ABSOLUTE MAXIMUM RATINGS. 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 0 UNIT V V V A A W °C IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 2.0 1.2 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL MIN. 35 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 25 5 - (Volts) - (Volts) 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V+ -=2V IC/IB=10 1.0 V V 0.8 CONDITIONS. IC=100µA IC=10mA* IE=100µA 0.6 0.4 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse T est at Tamb=25°C td tr tf ns VBE(on) v IC IB1=IB2=IC/10 0.12 0.40 0.9 0.8 200 200 150 50 240 25 55 300 V V V V 140 VCB=30V VCB=30V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA 1 Switching time 120 td ts ns 100 tr 1000 80 tf 800 0.1 DC 1s 100ms 10ms 1ms 100µs 60 ts 40 600 400 20 200 0.01 0 0.01 0.1 1 0 fT Cobo ton toff 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 206 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 205