FZT655

FZT655 TYPICAL CHARACTERISTICS 0.18 100 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage 7 FZT655 C COMPLEMENTARY TYPE – FZT755 E VCE=5V - Normalised Gain (%) - (Volts) 80 PARTMARKING DETAIL – FZT655 B 0.10 IC/IB=10 C 60 40 V 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.01 0.1 1 10 0 0.01 0.1 1 10 0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 150 150 5 2 1 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=125V VEB=3V UNIT V V V A A W °C h Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.2 1.2 IC/IB=10 VCE=5V - (Volts) Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 50 20 30 150 150 5 - (Volts) 1.0 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 0.8 V 0.6 V 0.6 0.4 0.01 0.1 1 10 0.4 0.01 0.1 1 10 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse T est at Tamb=25°C td tr tf µs ts VBE(on) v IC ts µs 0.1 0.1 0.5 0.5 1.1 1.0 µA µA IB1=IB2=IC/10 VCE=10V 3.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V V V V 1 0.7 IC=500mA, IB=50mA* IC=1A, IB=200mA* IC=500mA, IB=50mA* IC=500mA, VCE =5V* IC=10mA, VCE =5V* IC=500mA, VCE =5V* IC=1A, VCE =5V* 0.6 td 2.0 Switching time 0.5 0.1 DC 100ms 10ms 1ms 300µs 0.4 0.3 tf 0.2 1.0 0.1 tr 0.01 0 300 MHz 20 3 - 211 pF 1 10 100 1000 0.01 0.1 1 VCE - Collector Emitter Voltage (V) I+ - Collector Current (Amps) Transition Frequency Output Capacitance IC=10mA, VCE =20V f=20MHz VCB =10V, f=1MHz Safe Operating Area 3 - 212 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% FZT655 TYPICAL CHARACTERISTICS 0.18 100 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage 7 FZT655 C COMPLEMENTARY TYPE – FZT755 E VCE=5V - Normalised Gain (%) - (Volts) 80 PARTMARKING DETAIL – FZT655 B 0.10 IC/IB=10 C 60 40 V 20 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.01 0.1 1 10 0 0.01 0.1 1 10 0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 150 150 5 2 1 2 -55 to +150 UNIT V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=125V VEB=3V UNIT V V V A A W °C h Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.2 1.2 IC/IB=10 VCE=5V - (Volts) Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 50 20 30 150 150 5 - (Volts) 1.0 1.0 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 0.8 V 0.6 V 0.6 0.4 0.01 0.1 1 10 0.4 0.01 0.1 1 10 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse T est at Tamb=25°C td tr tf µs ts VBE(on) v IC ts µs 0.1 0.1 0.5 0.5 1.1 1.0 µA µA IB1=IB2=IC/10 VCE=10V 3.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V V V V 1 0.7 IC=500mA, IB=50mA* IC=1A, IB=200mA* IC=500mA, IB=50mA* IC=500mA, VCE =5V* IC=10mA, VCE =5V* IC=500mA, VCE =5V* IC=1A, VCE =5V* 0.6 td 2.0 Switching time 0.5 0.1 DC 100ms 10ms 1ms 300µs 0.4 0.3 tf 0.2 1.0 0.1 tr 0.01 0 300 MHz 20 3 - 211 pF 1 10 100 1000 0.01 0.1 1 VCE - Collector Emitter Voltage (V) I+ - Collector Current (Amps) Transition Frequency Output Capacitance IC=10mA, VCE =20V f=20MHz VCB =10V, f=1MHz Safe Operating Area 3 - 212 Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%