FZT658

FZT658 TYPICAL CHARACTERISTICS 1.6 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.6 1.4 -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage IC/IB=10 FZT658 C - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 E COMPLEMENTARY TYPE PARTMARKING DETAIL FZT758 FZT658 C B - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.001 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 V V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.3 0.25 0.5 0.9 1.0 50 50 40 50 10 130 3300 MHz pF ns ns nA nA V V V V V VALUE 400 400 5 1 0.5 2 -55 to +150 CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=320V VEB=4V UNIT V V V A A W °C 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=10V 300 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO 400 400 5 - Typical gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). h 0.01 0.1 1 10 20 h V 100 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff hFE v IC 1 VBE(sat) v IC IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA 1.6 1.4 -55°C +25°C +100°C +175°C VCE=10V - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Static Forward Current Transfer Ratio Transition Frequency 0.001 1 10 100 1000 I+ - Collector Current (Amps) Output Capacitance Switching Times VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 216 3 - 215 FZT658 TYPICAL CHARACTERISTICS 1.6 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.6 1.4 -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage IC/IB=10 FZT658 C - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 E COMPLEMENTARY TYPE PARTMARKING DETAIL FZT758 FZT658 C B - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 ABSOLUTE MAXIMUM RATINGS. PARAMETER 0.001 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 V V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.3 0.25 0.5 0.9 1.0 50 50 40 50 10 130 3300 MHz pF ns ns nA nA V V V V V VALUE 400 400 5 1 0.5 2 -55 to +150 CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=320V VEB=4V UNIT V V V A A W °C 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=10V 300 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO 400 400 5 - Typical gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). h 0.01 0.1 1 10 20 h V 100 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff hFE v IC 1 VBE(sat) v IC IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA 1.6 1.4 -55°C +25°C +100°C +175°C VCE=10V - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 DC 1s 100ms 10ms 1ms 100µs V 0.01 Static Forward Current Transfer Ratio Transition Frequency 0.001 1 10 100 1000 I+ - Collector Current (Amps) Output Capacitance Switching Times VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 216 3 - 215