FZT688B

FZT688B TYPICAL CHARACTERISTICS 0.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A * Gain of 400 at IC=3 Amps and very low saturation voltage APPLICATIONS * Flash gun convertors & Battery powered circuits PARTMARKING DETAIL – COMPLEMENTARY TYPE PARAMETER Collector-Base Voltage 0.01 0.1 1 I+ - Collector Current (Amps) 10 FZT688B C 0.8 IC/IB=100 E C B - (Volts) 0.6 0.4 - (Volts) 0.6 0.4 FZT688B FZT788B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 12 12 5 10 4 2 -55 to +150 ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W °C V 0.2 0 V 0.2 0 0.01 0.1 1 I+ - Collector Current (Amps) 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100°C +25°C -55°C VCE=2V 1.5K 1K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Breakdown Voltages V(BR)CBO 12 V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) 12 5 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V 0.1 0.1 0.04 0.06 0.18 0.35 0.40 1.1 1.0 500 400 100 150 200 40 40 500 MHz pF pF ns ns µA µA IC=100µ A IC=10mA* IE=100µ A VCB=10V VEB=4V IC=0.1A, IB=1mA IC=0.1A,IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* IC=4A, IB=50mA* IC=3A, IB=20mA* IC=3A, VCE=2V IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* IC=50mA,VCE=5V f=50MHz VEB=0.5Vf=1MHz VCB=10V,f=1MHz IB2=50mA, VCC=10V I C=500mA, IB1=50A h 0.01 0.1 1 10 h V 500 I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 Emitter Cut-Off Current Collector-Emitter Saturation Voltage hFE v IC VBE(sat) v IC V V V V V V V I -Collector Current (A) 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 Base-Emitter SaturationVoltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 0.1 Transition Frequency Input Capacitance Output Capacitance Switching Times V + 0.01 0.1V 1V 10V 100V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 218 3 - 217 FZT688B TYPICAL CHARACTERISTICS 0.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C -55°C +25°C +100°C +175°C SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A * Gain of 400 at IC=3 Amps and very low saturation voltage APPLICATIONS * Flash gun convertors & Battery powered circuits PARTMARKING DETAIL – COMPLEMENTARY TYPE PARAMETER Collector-Base Voltage 0.01 0.1 1 I+ - Collector Current (Amps) 10 FZT688B C 0.8 IC/IB=100 E C B - (Volts) 0.6 0.4 - (Volts) 0.6 0.4 FZT688B FZT788B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 12 12 5 10 4 2 -55 to +150 ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W °C V 0.2 0 V 0.2 0 0.01 0.1 1 I+ - Collector Current (Amps) 10 Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100°C +25°C -55°C VCE=2V 1.5K 1K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Breakdown Voltages V(BR)CBO 12 V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) 12 5 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V 0.1 0.1 0.04 0.06 0.18 0.35 0.40 1.1 1.0 500 400 100 150 200 40 40 500 MHz pF pF ns ns µA µA IC=100µ A IC=10mA* IE=100µ A VCB=10V VEB=4V IC=0.1A, IB=1mA IC=0.1A,IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* IC=4A, IB=50mA* IC=3A, IB=20mA* IC=3A, VCE=2V IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* IC=50mA,VCE=5V f=50MHz VEB=0.5Vf=1MHz VCB=10V,f=1MHz IB2=50mA, VCC=10V I C=500mA, IB1=50A h 0.01 0.1 1 10 h V 500 I+ - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 Emitter Cut-Off Current Collector-Emitter Saturation Voltage hFE v IC VBE(sat) v IC V V V V V V V I -Collector Current (A) 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 Base-Emitter SaturationVoltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio DC 1s 100ms 10ms 1ms 100µs VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 0.1 Transition Frequency Input Capacitance Output Capacitance Switching Times V + 0.01 0.1V 1V 10V 100V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 218 3 - 217