FZT694B
TYPICAL CHARACTERISTICS
IC/IB=200 0.8 IC/IB =10 IC/IB=100 Tamb=25°C 0.8
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B
FZT694B
C
-55°C +25°C +100°C +175°C
IC/IB=100
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9
µA µA
- (Volts)
0.6
- (Volts)
0.6
0.4
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C
0.2
0.2
UNIT V V V A A W °C
V
0 0.01 0.1 1 10
V
0 0.01 0.1 1 10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
- Normalised Gain
1.4 1.2 1.0 0.8 0.6
+100°C +25°C -55°C
VCE=2V 1.5K 1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=100
Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio MIN. 120 120 5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
TYP. CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz 200 9 80 2900 pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V
- Typical Gain
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2
1K
500 0.4
h
0.2 0
0
0.01
0.1
1
10 0 0.01 0.1 1 10
h
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
V V V V
1.6 1.4
-55°C +25°C +100°C +175°C
VCE=2V
10
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
1
DC 1s 100ms 10ms 1ms 100us
Transition Frequency Input Capacitance Output Capacitance
10 100 1000
V
0.1
0
0.01
0.1
1
10
0.01 1
Switching Times
I+ - Collector Current (Amps) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device
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FZT694B
TYPICAL CHARACTERISTICS
IC/IB=200 0.8 IC/IB =10 IC/IB=100 Tamb=25°C 0.8
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B
FZT694B
C
-55°C +25°C +100°C +175°C
IC/IB=100
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9
µA µA
- (Volts)
0.6
- (Volts)
0.6
0.4
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C
0.2
0.2
UNIT V V V A A W °C
V
0 0.01 0.1 1 10
V
0 0.01 0.1 1 10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
- Normalised Gain
1.4 1.2 1.0 0.8 0.6
+100°C +25°C -55°C
VCE=2V 1.5K 1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=100
Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio MIN. 120 120 5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
TYP. CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz 200 9 80 2900 pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V
- Typical Gain
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2
1K
500 0.4
h
0.2 0
0
0.01
0.1
1
10 0 0.01 0.1 1 10
h
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
V V V V
1.6 1.4
-55°C +25°C +100°C +175°C
VCE=2V
10
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
1
DC 1s 100ms 10ms 1ms 100us
Transition Frequency Input Capacitance Output Capacitance
10 100 1000
V
0.1
0
0.01
0.1
1
10
0.01 1
Switching Times
I+ - Collector Current (Amps) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device
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