FZT717 SOT223 PNP medium power transistor
Summary
BVCEO = -12V; IC = 3A
Description
Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Features
• • • • 2W power dissipation 3A continuous current Excellent hFE characteristics up to 10A (pulsed) Low saturation voltage
C
B
E
Applications
• • • Battery charging MOSFET and IGBT gate driving Motor drive
E C
Tape width (mm) 12 Quantity per reel
Ordering information
Device FZT717TA Reel size (inches) 7
C B Pinout - top view
1,000
Device marking
FZT717
Issue 2 - September 2006
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FZT717
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Symbol BVCBO BVCEO BVEBO ICM IC IB PD Tj, Tstg Limit -12 -12 -5 -10 -3 -500 2 -55 to +150 Unit V V V A A mA W °C
Thermal resistance
Parameter Junction to ambient Symbol R JA Limit 62.5 Unit °C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
Issue 2 - September 2006
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FZT717
Typical characteristics
Issue 2 - September 2006
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FZT717
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. -12 -12 -5 -100 -100 -20 -150 -320 Base-emitter saturation voltage Base-emitter turn-on voltage VBE(sat) VBE(on) 300 300 160 60 45 Transition frequency Output capacitance Switching times fT COBO ton toff 80 110 21 70 130
2%
Typ.
Max.
Unit V V V nA nA mV
Conditions IC = 100µA IC = 10mA IE = 100µA VCB = -10V VEB = -4V IC =-0.1A, IB =-10mA (*) IC =-1A, IB =-10mA(*) IC =-3A, IB =-50mA(*)
-1050 -1000
mV mV
IC =-3A, IB =-50mA(*) IC =-3A, VCE =-2V(*) IC =-10mA, VCE =-2V(*) IC =-100mA, VCE =-2V(*) IC =-3A, VCE =-2V(*) IC =-8A, VCE =-2V(*) IC =-10A, VCE =-2V(*)
Static forward current transfer hFE ratio
MHz 30 pF ns ns
IC =-50mA, VCE =-10V f = 100MHz VCB =-10V, f = 1MHz VCC =-6V, IC =-2A IB1 = IB2 =50mA
NOTES: (*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
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www.zetex.com
FZT717
Typical characteristics
Issue 2 - September 2006
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FZT717
Package outline - SOT223
DIM A A1 b b2 C D
Millimeters Min 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 -
Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264
DIM e e1 E E1 L -
Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
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Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
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