FZT755

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 1A (pulsed). COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT655 FZT755 FZT755 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -150 -150 -5 -2 -1 2 -55 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. -150 -150 -5 -0.1 -0.1 -0.5 -0.5 -1.1 -1.0 50 50 20 30 20 TYP. MAX. UNIT V V V µA µA V V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-125V VEB=-3V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* MHz pF IC= - 1 0 m A , f=20MHz VCE=-20V C o l l e c t o r - B a s e V(BR)CBO Breakdown Voltage C o l l e c t o r - E m i t t e r V(BR)CEO Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)EBO ICBO IEBO C o l l e c t o r - E m i t t e r VCE(sat) Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo 300 VCB=-10V f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% TBA FZT755 TYPICAL CHARACTERISTICS 0.8 ts µs td tr tf µs ts IB1=IB2=IC/10 VCE=10V 2.0 0.5 VCE(sat) - (Volts) 0.6 IC/IB=10 0.4 0.4 td Switching time 0.3 1.0 0.2 tr 0.1 tf 0.2 0 0.001 0.01 0.1 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 hFE - Normalised Gain (%) 1.0 80 IC/IB=10 60 40 VBE(sat) - (Volts) VCE=5V 0.8 0.6 20 0.4 0.001 0.01 0.1 1 10 0.2 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C 10 VCE=5V IC - Collector Current (A) 1.2 VBE - (Volts) 1.0 1 0.8 0.1 0.6 DC 100ms 10ms 1ms 300µs 0.4 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area TBA