FZT758

FZT758 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 Tamb=25°C SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 C FZT758 IC/IB =50 1.6 1.4 -55°C +25°C +100°C +175°C IC /IB =10 E C B - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 20 V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. MAX. VALUE -400 -400 -5 -1 -500 2 -55 to +150 UNIT CONDITIONS. UNIT V V V A mA W °C 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE =10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 140 2000 50 50 40 50 20 Typical Typical MHz pF ns ns -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -1.0 V V V nA nA nA V V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* IC=-20mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-100mA, VCC=-100V IB1=10mA, IB2=-20mA - Normalised Gain - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 100 h h 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE =10V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 Static Forward Current Transfer Ratio Transition Frequency V 0 0.001 0.01 0.1 1 10 20 0.001 1V 10V 100V 1000V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Switching times VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 243 3 - 242 FZT758 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB =20 IC/IB =10 Tamb=25°C SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 C FZT758 IC/IB =50 1.6 1.4 -55°C +25°C +100°C +175°C IC /IB =10 E C B - (Volts) 1.2 1.0 0.8 0.6 - (Volts) 1.2 1.0 0.8 0.6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage 0.01 0.1 1 10 20 V SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. MAX. VALUE -400 -400 -5 -1 -500 2 -55 to +150 UNIT CONDITIONS. UNIT V V V A mA W °C 0.4 0.2 0 0.001 0.01 0.1 1 10 20 V 0.4 0.2 0 0.001 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE =10V 1.6 300 1.4 -55°C +25°C +100°C +175°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 140 2000 50 50 40 50 20 Typical Typical MHz pF ns ns -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -1.0 V V V nA nA nA V V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* IC=-20mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-100mA, VCC=-100V IB1=10mA, IB2=-20mA - Normalised Gain - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 100 h h 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE =10V 1 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 Static Forward Current Transfer Ratio Transition Frequency V 0 0.001 0.01 0.1 1 10 20 0.001 1V 10V 100V 1000V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Switching times VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 243 3 - 242