FZT789A-PNP

FZT789A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 0.2 0 0.01 0.1 1 10 -55°C +25°C +100°C +175°C SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER FZT689B FZT789A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg FZT789A C IC/IB=100 E C B VALUE -25 -25 -5 -6 -3 2 -55 to +150 UNIT V V V A A W °C - (Volts) - (Volts) ABSOLUTE MAXIMUM RATINGS. V 0.4 0.2 0 I+ - Collector Current (Amps) V I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100°C +25°C -55°C VCE=2V 750 1.6 1.4 - Typical Gain -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltages V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) -25 -25 -5 -40 -35 -8.5 -0.1 10 -0.1 - Normalised Gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 00 0.01 0.1 1 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V µA µA µA 500 250 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-15V VCB=-15V, Tamb=100°C VEB=-4V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* h h V I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter Cut-Off Current Saturation Voltages hFE v IC VBE(sat) v IC -0.15 -0.25 V -0.30 -0.45 V -0.30 -0.50 V -0.8 -0.8 300 250 200 100 100 225 25 35 400 800 -1.0 V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 10 VBE(sat) Base-Emitter Turn-On Voltage DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 Static Forward Current Transfer Ratio Transition Frequency Input Capacitance 1 10 100 0.1 V fT Cibo Cobo ton toff MHz IC=-50mA, VCE=-5V, f=50MHz pF pF ns ns VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Switching Times VBE(on) v IC Safe Operating Area 3 - 247 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 246 FZT789A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 0.2 0 0.01 0.1 1 10 -55°C +25°C +100°C +175°C SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER FZT689B FZT789A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg FZT789A C IC/IB=100 E C B VALUE -25 -25 -5 -6 -3 2 -55 to +150 UNIT V V V A A W °C - (Volts) - (Volts) ABSOLUTE MAXIMUM RATINGS. V 0.4 0.2 0 I+ - Collector Current (Amps) V I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100°C +25°C -55°C VCE=2V 750 1.6 1.4 - Typical Gain -55°C +25°C +100°C +175°C IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Breakdown Voltages V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) -25 -25 -5 -40 -35 -8.5 -0.1 10 -0.1 - Normalised Gain - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 00 0.01 0.1 1 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V µA µA µA 500 250 IC=-100µ A IC=-10mA* IE=-100µ A VCB=-15V VCB=-15V, Tamb=100°C VEB=-4V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* h h V I+ - Collector Current (Amps) I+ - Collector Current (Amps) Emitter Cut-Off Current Saturation Voltages hFE v IC VBE(sat) v IC -0.15 -0.25 V -0.30 -0.45 V -0.30 -0.50 V -0.8 -0.8 300 250 200 100 100 225 25 35 400 800 -1.0 V V 1.6 1.4 -55°C +25°C +100°C VCE=2V 10 VBE(sat) Base-Emitter Turn-On Voltage DC 1s 100ms 10ms 1ms 100µs VBE(on) hFE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 Static Forward Current Transfer Ratio Transition Frequency Input Capacitance 1 10 100 0.1 V fT Cibo Cobo ton toff MHz IC=-50mA, VCE=-5V, f=50MHz pF pF ns ns VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V 0.01 0.1 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Switching Times VBE(on) v IC Safe Operating Area 3 - 247 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 246