FZT849

FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1kΩ IEBO VCE(sat) 35 67 168 MIN. 80 80 30 6 TYP. 120 120 40 8 50 1 50 1 10 50 110 215 350 1.2 1.13 100 100 100 30 200 200 150 65 100 75 45 630 300 MAX. UNIT V V V V nA CONDITIONS. IC=100µA IC=1µA, RB ≤1kΩ IC=10mA* IE=100µA VCB=70V VCB=70V, Tamb=100°C VCB=70V VCB=70V, Tamb=100°C VEB=6V IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* IC=6.5A, IB=300mA IC=6.5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* MHz pF ns ns IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz* IC=1A, IB1=100mA IB2=100mA, VCC=10V SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS COMPLEMENTARY TYPE FZT849 FZT949 FZT849 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 30 6 20 7 3 -55 to +150 UNIT V V V A A W °C µA nA µA nA mV mV mV mV V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 258 3 - 257 FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1kΩ IEBO VCE(sat) 35 67 168 MIN. 80 80 30 6 TYP. 120 120 40 8 50 1 50 1 10 50 110 215 350 1.2 1.13 100 100 100 30 200 200 150 65 100 75 45 630 300 MAX. UNIT V V V V nA CONDITIONS. IC=100µA IC=1µA, RB ≤1kΩ IC=10mA* IE=100µA VCB=70V VCB=70V, Tamb=100°C VCB=70V VCB=70V, Tamb=100°C VEB=6V IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* IC=6.5A, IB=300mA IC=6.5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* MHz pF ns ns IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz* IC=1A, IB1=100mA IB2=100mA, VCC=10V SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS COMPLEMENTARY TYPE FZT849 FZT949 FZT849 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 30 6 20 7 3 -55 to +150 UNIT V V V A A W °C µA nA µA nA mV mV mV mV V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 258 3 - 257 FZT849 TYPICAL CHARACTERISTICS 0.8 1.6 300 - Normalised Gain 0.6 1.2 1.0 0.8 VCE=5V 0.6 0.4 0.2 VCE=1V 200 0.4 IC/IB=10 IC/IB=50 V 0.2 h 0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 - (Volts) 1.5 IC/IB=10 IC/IB=50 - (Volts) 1.5 1.0 V 1.0 V 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC Single Pulse T est at Tamb=25°C 100 VBE(on) v IC I - Collector Current (Amps) 10 D.C. 1s 100ms 1 10ms 1.0ms 0.1ms 0.1 0.1 V+- - Collector Voltage (Volts) 1 10 100 Safe Operating Area 3 - 259 h 100 - Typical Gain - (Volts) 1.4