FZT857

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE FZT857 FZT957 FZT857 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 350 300 6 5 3.5 3 -55 to +150 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square. FZT857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 350 TYP. 475 MAX. UNIT V CONDITIONS. I C=100 µ A I C =1 µ A, RB ≤ 1k Ω I C=10mA* I E=100 µ A V CB=300V V CB=300V, T amb=100°C V CB=300V V CB=300V, T amb=100°C V EB=6V I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=2A, I B=200mA* I C=3.5A, I B=600mA* I C=3.5A, I B=600mA* I C =3.5A, V CE=10V* I C=10mA, V CE=5V I C=500mA, V CE=10V* I C=2A, V CE=10V* I C=3A, V CE=10V* MHz I C==100mA, V CE=10V f=50MHz V CB=20V, f=1MHz I C=250mA, I B1=25mA I B2=25mA, V CC=50V 350 300 475 350 V V 6 8 50 1 50 1 10 100 155 230 345 1250 1.12 V nA µA nA µA nA mV mV mV mV mV V Collector Cut-Off Current I CER R ≤ 1k Ω I EBO V CE(sat) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V BE(sat) V BE(on) h FE 100 100 15 200 200 25 15 80 300 fT C obo t on t off Output Capacitance Switching Times 11 100 5300 pF ns ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device FZT857 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 VCE=10V VCE=2V 100 200 0.4 IC/IB=10 IC/IB=50 0.2 0 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 2.0 VBE(sat) - (Volts) 1.5 VBE - (Volts) IC/IB=10 IC/IB=50 1.5 1.0 1.0 0.5 0.0001 0.001 0.01 0.1 1 10 0.5 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test Tamb=25 °C IC - Collector Current (A) 1 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 1 10 100 1000 VCE - Collector Voltage (V) Safe Operating Area hFE - Typical Gain 1.4 300 VCE(sat) - (Volts)