FZT948

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps FZT948 FZT949 C E C PARTMARKING DETAILS — DEVICE TYPE IN FULL B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:Tstg -6 3 -55 to +150 FZT948 -40 -20 -6 -20 -5.5 FZT949 -50 -30 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum TBA FZT948 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. -40 -40 -20 -6 TYP. -55 -55 -30 -8 -50 -1 -50 -1 -10 -60 -110 -200 -360 -1050 -870 100 100 75 60 15 200 200 160 130 40 80 163 120 126 -130 -180 -280 -450 -1200 -1050 MAX. UNIT V V V V nA µA nA µA nA mV mV mV mV mV mV CONDITIONS. I C=-100 µ A I C =-1 µ A, RB ≤ 1k Ω I C=-10mA* I E=-100 µ A V CB=-30V V CB=-30V, T amb=100°C V CB=-30V V CB=-30V, T amb=100°C V EB=-6V I C=-0.5A, I B=-10mA* I C=-2A, I B=-200mA* I C=-4A, I B=-400mA* I C=-6A, I B=-250mA* I C=-5A, I B=-300mA* I C =-6A, V CE=-1V* I C=-10mA, V CE = -1V I C=-1A, V CE = -1V* I C=-5A, V CE = -1V* I C=-10A, V CE = -1V* I C=-20A, V CE = -2V* MHz pF ns ns I C=-100mA, V CE=-10V f=50MHz V CB=-10V, f=1MHz I C=-4A, I B1=-400mA I B2=400mA, V CC=-10V Collector Cut-Off Current I CER R ≤ 1k Ω I EBO Emitter Cut-Off Current Collector-Emitter Saturation V CE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 300 Transition Frequency Output Capacitance Switching Times fT C obo t on t off *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device RCE(sat)46mΩ at 5A TBA FZT948 TBA FZT949 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. -50 -50 -30 -6 TYP. -80 -80 -45 -8 -50 -1 -50 -1 -10 -50 -85 -190 -350 -1100 -900 100 100 75 200 200 140 35 100 122 120 130 -75 -140 -270 -440 -1250 -1060 MAX. UNIT V V V V nA µA nA µA nA mV mV mV mV mV mV CONDITIONS. I C=-100 µ A I C =-1 µ A, RB ≤ 1k Ω I C=-10mA* I E=-100 µ A V CB=-40V V CB=-40V, T amb=100 ° C V CB=-40V V CB=-40V, T amb=100 ° C V EB=-6V I C=-0.5A, I B=-20mA* I C=-1A, I B=-20mA* I C=-2A, I B=-200mA* I C=-5.5A, I B=-500mA* I C=-5.5A, I B=-500mA* I C =-5.5A, V CE=-1V* I C=-10mA, V CE = -1V I C=-1A, V CE = -1V* I C=-5A, V CE = -1V* I C=-20A, V CE = -2V* MHz pF ns ns I C=-100mA, V CE=-10V f=50MHz V CB=-10V, f=1MHz I C=-4A, I B1=-400mA I B2=400mA, V CC=-10V Collector Cut-Off Current I CER R ≤ 1k Ω I EBO Emitter Cut-Off Current Collector-Emitter Saturation V CE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 300 Transition Frequency Output Capacitance Switching Times fT C obo t on t off *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device RCE(sat)44mΩ at 4.5A TBA FZT949 TYPICAL CHARACTERISTICS IC/IB=50 IC/IB=10 Tamb=25°C -55°C +25°C +175°C IC/IB=10 1.6 1.6 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain hFE - Typical Gain VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=1V 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C IC/IB=10 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE=1V 100 Single Pulse Test Tamb=25 °C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (A) VBE - (Volts) 10 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 100 0.01 0.1 1 10 20 IC - Collector Current (Amps) Vce - Collector Voltage (V) VBE(on) v IC Safe Operating Area TBA