FZT955

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps PARTMARKING DETAILS – DEVICE TYPE IN FULL COMPLEMENTARY TYPES – FZT955 - FZT855 FZT956 - N/A FZT955 FZT956 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -10 -4 3 -55 to +150 FZT955 -180 -140 -6 -5 -2 FZT956 -220 -200 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 284 FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -180 -180 -140 -6 TYP. -210 -210 -170 -8 -50 -1 -50 -1 -10 -30 -70 -110 -275 -970 -830 100 100 75 200 200 140 10 110 40 68 1030 -60 -120 -150 -370 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA IC=-100µ A VCE(sat) - (Volts) FZT955 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 -55°C +25°C +175°C IC/IB=10 IC=-1µ A, RB ≤ 1kΩ IC=-10mA* IE=-100µ A VCB=-150V VCB=-150V,Tamb=100°C VCB=-150V VCB=-150V,Tamb=100°C VEB=-6V IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-3A, IB=-300mA* I+ =-3A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) VCE(sat) - (Volts) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current ICER R ≤ 1kΩ IEBO VCE(sat) µA hFE - Normalised Gain Emitter Cut-Off Current Collector-Emitter Saturation Voltage nA mV mV mV mV mV mV 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=5V 300 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 hFE - Typical Gain VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 -55°C +25°C +100°C +175°C VBE(sat) v IC Single Pulse Test at Tamb=25°C 300 1.6 1.4 VCE=5V VBE - (Volts) Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz IC=-100mA, VCE=-10V f=50MHz pF ns ns VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V IC - Collector Current (Amps) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.01 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 285 3 - 286 FZT955 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 -55°C +25°C +175°C IC/IB=10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) VCE(sat) - (Volts) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=5V 300 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 hFE - Typical Gain VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC V BE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE=5V VCE - Collector Current (Amps) 10 VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 1 DC 1s 100ms 0.1 10ms 1ms 100us 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 286 FZT956 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 110 32 67 1140 -50 -165 -275 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA µA nA mV mV mV mV mV IC=-100µ A FZT956 TYPICAL CHARACTERISTICS IC /IB=50 1.6 IC /IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +175°C IC /IB =10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 IC=-10mA* V IE=-100µ A VCB=-200V VCB=-200V,Tamb=100°C VCB=-200V VCB=-200V,Tamb=100°C VEB=-6V IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* V 0.01 0.1 1 10 20 - (Volts) IC=-1µ A, RB ≤ 1kΩ 1.4 0.001 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current ICER R ≤ 1kΩ IEBO VCE(sat) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=1V 300 1.6 -55°C +25°C +100°C +175°C IC /IB =10 - Normalised Gain - Typical Gain 1.4 - (Volts) V 1.2 1.0 0.8 0.6 200 VBE(sat) VBE(on) hFE h 100 0.4 0.2 h 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) 300 hFE v IC 10 VCE=1V VBE(sat) v IC Single Pulse Test Tamb=25C Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C 1 DC 1s 100ms 10ms 1ms 100µs VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V 0.1 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device V 0 0.01 0.001 0.01 0.1 1 10 20 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Voltage (V) VBE(on) v IC Safe Operating Area 3 - 287 3 - 288 FZT956 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 110 32 67 1140 -50 -165 -275 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA µA nA mV mV mV mV mV IC=-100µ A FZT956 TYPICAL CHARACTERISTICS IC /IB=50 1.6 IC /IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +175°C IC /IB =10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 IC=-10mA* V IE=-100µ A VCB=-200V VCB=-200V,Tamb=100°C VCB=-200V VCB=-200V,Tamb=100°C VEB=-6V IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* V 0.01 0.1 1 10 20 - (Volts) IC=-1µ A, RB ≤ 1kΩ 1.4 0.001 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current ICER R ≤ 1kΩ IEBO VCE(sat) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100°C +25°C -55°C VCE=1V 300 1.6 -55°C +25°C +100°C +175°C IC /IB =10 - Normalised Gain - Typical Gain 1.4 - (Volts) V 1.2 1.0 0.8 0.6 200 VBE(sat) VBE(on) hFE h 100 0.4 0.2 h 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) 300 hFE v IC 10 VCE=1V VBE(sat) v IC Single Pulse Test Tamb=25C Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C 1 DC 1s 100ms 10ms 1ms 100µs VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V 0.1 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device V 0 0.01 0.001 0.01 0.1 1 10 20 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Voltage (V) VBE(on) v IC Safe Operating Area 3 - 287 3 - 288