SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps PARTMARKING DETAILS – DEVICE TYPE IN FULL COMPLEMENTARY TYPES – FZT955 - FZT855 FZT956 - N/A
FZT955 FZT956
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -10 -4 3 -55 to +150 FZT955 -180 -140 -6 -5 -2 FZT956 -220 -200 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 284
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -180 -180 -140 -6 TYP. -210 -210 -170 -8 -50 -1 -50 -1 -10 -30 -70 -110 -275 -970 -830 100 100 75 200 200 140 10 110 40 68 1030 -60 -120 -150 -370 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA IC=-100µ A
VCE(sat) - (Volts)
FZT955
TYPICAL CHARACTERISTICS
1.6 1.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20
-55°C +25°C +175°C
IC/IB=10
IC=-1µ A, RB ≤ 1kΩ IC=-10mA* IE=-100µ A VCB=-150V VCB=-150V,Tamb=100°C VCB=-150V VCB=-150V,Tamb=100°C VEB=-6V IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-3A, IB=-300mA* I+ =-3A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V*
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC - Collector Current (Amps)
VCE(sat) - (Volts)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
Collector Cut-Off Current
ICER R ≤ 1kΩ IEBO VCE(sat)
µA
hFE - Normalised Gain
Emitter Cut-Off Current Collector-Emitter Saturation Voltage
nA mV mV mV mV mV mV
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
+100°C +25°C -55°C
VCE=5V 300
1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=10
hFE - Typical Gain
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10
-55°C +25°C +100°C +175°C
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
300
1.6 1.4
VCE=5V
VBE - (Volts)
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
MHz IC=-100mA, VCE=-10V f=50MHz pF ns ns VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V
IC - Collector Current (Amps)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
1
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device
0.01 1
10
100
1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3 - 285
3 - 286
FZT955
TYPICAL CHARACTERISTICS
1.6 1.4 IC/IB=50 IC/IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20
-55°C +25°C +175°C
IC/IB=10
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC - Collector Current (Amps)
VCE(sat) - (Volts)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
+100°C +25°C -55°C
VCE=5V 300
1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=10
hFE - Typical Gain
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
V
BE(sat) v IC
1.6 1.4
-55°C +25°C +100°C +175°C
VCE=5V
VCE - Collector Current (Amps)
10
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
1
DC 1s 100ms
0.1
10ms 1ms 100us
0.01 1 10 100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3 - 286
FZT956
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 110 32 67 1140 -50 -165 -275 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA µA nA mV mV mV mV mV IC=-100µ A
FZT956
TYPICAL CHARACTERISTICS
IC /IB=50 1.6 IC /IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55°C +25°C +175°C
IC /IB =10
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
IC=-10mA*
V
IE=-100µ A VCB=-200V VCB=-200V,Tamb=100°C VCB=-200V VCB=-200V,Tamb=100°C VEB=-6V IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V*
V
0.01 0.1 1 10 20
- (Volts)
IC=-1µ A, RB ≤ 1kΩ
1.4
0.001
0
0.001
0.01
0.1
1
10
20
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
Collector Cut-Off Current
ICER R ≤ 1kΩ IEBO VCE(sat)
Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
+100°C +25°C -55°C
VCE=1V 300
1.6
-55°C +25°C +100°C +175°C
IC /IB =10
- Normalised Gain
- Typical Gain
1.4
- (Volts) V
1.2 1.0 0.8 0.6
200
VBE(sat) VBE(on) hFE
h
100
0.4 0.2
h
0.001
0.01
0.1
1
10
20
0 0.001 0.01 0.1 1 10 20
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
300
hFE v IC
10
VCE=1V
VBE(sat) v IC
Single Pulse Test Tamb=25C
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
MHz pF ns ns
IC=-100mA, VCE=-10V f=50MHz
- (Volts)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55°C +25°C +100°C +175°C
1
DC 1s 100ms 10ms 1ms 100µs
VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V
0.1
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device
V
0
0.01
0.001 0.01 0.1 1 10 20
1
10
100
1000
I+ - Collector Current (Amps)
VCE - Collector Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 287
3 - 288
FZT956
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 110 32 67 1140 -50 -165 -275 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA µA nA µA nA mV mV mV mV mV IC=-100µ A
FZT956
TYPICAL CHARACTERISTICS
IC /IB=50 1.6 IC /IB=10 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55°C +25°C +175°C
IC /IB =10
- (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0
IC=-10mA*
V
IE=-100µ A VCB=-200V VCB=-200V,Tamb=100°C VCB=-200V VCB=-200V,Tamb=100°C VEB=-6V IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V*
V
0.01 0.1 1 10 20
- (Volts)
IC=-1µ A, RB ≤ 1kΩ
1.4
0.001
0
0.001
0.01
0.1
1
10
20
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
Collector Cut-Off Current
ICER R ≤ 1kΩ IEBO VCE(sat)
Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
+100°C +25°C -55°C
VCE=1V 300
1.6
-55°C +25°C +100°C +175°C
IC /IB =10
- Normalised Gain
- Typical Gain
1.4
- (Volts) V
1.2 1.0 0.8 0.6
200
VBE(sat) VBE(on) hFE
h
100
0.4 0.2
h
0.001
0.01
0.1
1
10
20
0 0.001 0.01 0.1 1 10 20
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
300
hFE v IC
10
VCE=1V
VBE(sat) v IC
Single Pulse Test Tamb=25C
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
MHz pF ns ns
IC=-100mA, VCE=-10V f=50MHz
- (Volts)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55°C +25°C +100°C +175°C
1
DC 1s 100ms 10ms 1ms 100µs
VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V
0.1
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device
V
0
0.01
0.001 0.01 0.1 1 10 20
1
10
100
1000
I+ - Collector Current (Amps)
VCE - Collector Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 287
3 - 288