SDA32D20

SCHOTTKY DIODE ARRAY ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. The device helps suppress transients caused by transmission line reflections, cross talk and switching noise. The SDA32 consists of an array of 16 high speed Schottky diode pairs suitable for clamping to VCC and / or Gnd. SDA32 FEATURES • • • • • • Reduced reflection noise Repetitive peak forward current 200mA 16 diode pairs SO20 and DIL20 packages APPLICATIONS Termination of data lines Protection of memory devices SCHEMATIC DIAGRAM D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12 D13 D14 D15 D16 VCC VCC Gnd Gnd 4-11 SDA32 ABSOLUTE MAXIMUM RATING (at Tamb= 25°C unless otherwise stated)* Steady-State Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current (3) 7V 50mA(1) 170mA(2) 200mA(1) 1A(2) Continuous Total Power Dissipation (4) 625mW (SO and DIL packages) Operating Free-air Temperature Range Storage Temperature Range 0 to 70°C -65 to 150°C * Stresses beyond those listed above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under the recommended operating conditions is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability. Note: (1) Any D terminal from Gnd or to VCC (2) Total through all Gnd or VCC terminals (3) These values apply for tW=100µs, duty cycle ≤ 20% (4) For operation above 25°C , derate linearly at the rate of 6.25mW/°C ELECTRICAL CHARACTERISTICS (at Tamb=25°C unless otherwise stated) Single-Diode Operation PARAMETER Static Forward Voltage SYMBOL VF MIN. TYP. MAX. UNIT CONDITIONS To VCC , IF=18mA To VCC , IF=50mA From Gnd, IF=18mA From Gnd, IF=50mA IF=200mA To VCC ,VR=7V From Gnd, VR=7V VR=0, f=1MHz VR=2V, f=1MHz 0.85 1.05 0.75 0.95 1.05 1.3 0.95 1.2 6 5 V V V V V µA µA pF pF Peak Forward Voltage Static Reverse Current Total Capacitance VFM IR CT 1.45 6 4 16 6 Note: (5) Test conditions and limits apply separately to each of the diodes. The diodes not under test are open circuited during the measurement of these characteristics. Multiple-Diode Operation PARAMETER Internal Crosstalk Current SYMBOL IX MIN. TYP. MAX. UNIT CONDITIONS Total IF=1A (6) Total IF=198mA (6) 0.8 0.02 2 0.2 mA mA Note: (6) IX is measured under the following conditions with one diode static, and all others switching. Switching diodes: tW=100µs, duty cycle=0.2; static diode; VR=5V. The static diode input current is the internal crosstalk current IX. 4-12 SDA32 SWITCHING CHARACTERISTICS (over operating free-air temperature range) PARAMETER Reverse Recovery Time SYMBOL MIN. trr TYP. 8 MAX 16 UNIT ns CONDITIONS IF=10mA IR(REC)=1mA IRM(REC) =10mA RL=100Ω TYPICAL CHARACTERISTICS IF vs VF Characteristic IF vs VF Characteristic Low IF vs VF Characteristic 4-13 SDA32 CONNECTION DIAGRAMS SO20 Package Suffix – N20 DIL20 Package Suffix – D20 Top View Top View ORDERING INFORMATION Part Number SDA32N20 SDA32D20 Package SO20 DIL20 Part Mark SDA32 SDA32 4-14