VN10LF

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=5Ω PARTMARKING DETAIL – MY VN10LF S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 2 5°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb = 2 5°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 150 3 ± 20 330 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) On State Drain Current(1) Static Drain Source On State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs 100 750 5.0 7.5 MIN. 60 0.8 2.5 100 10 TYP. MAX. UNIT V V nA µA mA Ω Ω mS CONDITIONS. I D=100 µ A, V GS=0V I D =1mA, V DS= V GS V GS= ± 2 0V, V DS=0V V DS=60 V, V GS=0V V DS=15 V, V GS=10V V GS=10V, I D=500mA V GS=5V, I D=200mA V DS=15V, I D=500mA C iss C oss C rss t (on) t (off) 3 4 60 25 5 10 10 pF pF pF ns ns V DS=25 V, V GS=0V f=1MHz V DD ≈ 15V, I D=600mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and