1N4148G

1N4148G SMALL-SIGNAL DIODE Reverse Voltage 100 Volts DO-35 Peak Forward Current - 150mA .022 (0.56) .018 (0.46) 1.02 (26.0) MIN. .165 (4.2) MAX. FEATURES * Silicon Epitaxial Planar Diode * Fast switching diode. * Lead free product .079 (2.0) DIA. MAX. 1.02 (26.0) MIN. MECHANICAL DATA Case : DO-35 Glass Case Weight : approx. 0.13 gram *Dimensions in inches and (millimeters) MAXIMUM RATINGS THERMAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) PARAMETER Continuous Reverse Voltage Peak Reverse Voltage Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25oC Surge Forward Current at t < 1s and Tj = 25oC Power Dissipation at Tamb = 25 C o (1) o SYMBOLS VR VRM IF( AV ) IFSM Ptot VALUE 75 100 150 500 500 350 175 -65 to +175 UNITS Vdc Vdc mAdc mAdc mW K/W o o Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature (1) R JA TJ TSTG o C C ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) PARAMETER TEST CONDITION ( VR=20Vdc ) ( VR=75Vdc ) o ( VR=20Vdc, TJ=150 C ) ( IR=100uAdc ) ( IF=10mAdc ) ( VR=0, f=1.0MHz ) ( tp=0.1us, Rise time < 30ns fp=5 to 100 kHZ ( IF=10mA, IR=1mA, VR=6V, RL=100 ) SYMBOL MIN. 100 TYP. MAX. 25 5 50 1.0 4 2.5 UNITS nAdc uAdc uAdc Vdc Vdc pF V Reverse Voltage Leakage Current Reverse Breakdown Voltage Forward Voltage Junction Capacitance Voltage Rise when Switching ON ( tested with 50 mA Pulses ) IR V( BR ) VF CJ VFR Reverse Recovery Time trr - - 4 nS 1. Vaild provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) REV. : 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES OF 1N4148G FIG.1 - FORWARD CHARACTERISTICS 10 3 FIG.2 - ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 1000 For conditions, see footnote in table "Absolute Max. Ratings" 900 2 IF - FORWARD CURRENT ( mA ) 10 800 700 Tj = 100℃ Tj = 25℃ 10 Ptot ( mW ) 600 500 400 300 200 100 1 10 -1 10 -2 0 1 VF - FORWARD VOLTAGE ( V ) 2 0 0 100 Tamb ( ℃ ) 200 FIG.3 - RELATIVE CAPACITANCE VERSUS REVERSE VOLTAGE 10 Tj = 25℃ f = 1MHz 4 FIG.4 - LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 1.1 103 1.0 Ctot ( ℃ ) / ( 0 V ) IR ( nA ) 0.9 102 0.8 10 0.7 1 0 2 4 6 VR ( V ) 8 10 Tj ( ℃ ) VR = 20V FIG.5 - ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 100 50 I V = tp / T T = 1/ fp 10 IFRM ( A ) 5 IFRM tp t T 1 0.5 0.1 10-5 10-4 10-3 10-2 tp ( S ) 10-1 1 2 5 10 REV. : 0 Zowie Technology Corporation