BAV74

Z owie Technology Corporation Monolithic Dual Switching Diode 3 CATHODE ANODE 1 2 ANODE BAV74 1 2 3 SOT-23 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM( surge ) Value 50 200 500 Unit Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BAV74=JA ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Reverse Breakdown Voltage ( IBR=5.0 uAdc ) Forward Voltage ( IF=100 mAdc ) V(BR) 50 Vdc VF - 1000 mVdc Reverse Voltage Leakage Current ( VR=50 Vdc ) ( VR=50 Vdc, TJ=125 C ) o IR - 0.1 100 uAdc Diode Capacitance ( VR=0, f=1.0MHZ ) CJ - 2.0 pF Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. REV. : 0 ) trr - 4.0 nS Zowie Technology Corporation Zowie Technology Corporation BAV74 FIGURE 1. FORWARD VOLTAGE 100 10 FIGURE 2. LEAKAGE CURRENT TA=150 C o IF, FORWARD CURRENT ( mA ) IR, REVERSE CURRENT ( uA ) TA=85 C 10 TA= -40 C o o TA=125 C 1.0 o TA=85 C 0.1 TA=55 C 0.01 o o o 1.0 TA=25 C o TA=25 C 0.1 0.2 0.001 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VF, FORWARD VOLTAGE ( VOLTS ) VR, REVERSE VOLTAGE ( VOLTS ) FIGURE 3. CAPACITANCE 1.0 DIODE CAPACITANCE ( pF ) 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE ( VOLTS ) REV. : 0 Zowie Technology Corporation