BC846B

Z owie Technology Corporation General Purpose Transistor NPN Silicon 3 BASE 1 2 2 EMITTER COLLECTOR 3 BC846A,B 1 SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 65 80 6.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BC846A = 1A,BC846B = 1B ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=10mAdc ) Collector-Emitter Breakdowe Voltage ( IC=10 uAdc, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uAdc ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. V(BR)CEO 65 - - Vdc V(BR)CES 80 - - Vdc V(BR)CBO V(BR)EBO 80 6.0 - - Vdc Vdc ICBO - - 15 5.0 nAdc uAdc REV. : 0 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Typ. Max. Unit ON CHARACTERISTICS DC Current Gain ( IC= 10 uA, VCE= 5.0 V ) ( IC= 2.0 mA, VCE= 5.0 V ) BC846A BC846B BC846A BC846B 110 200 90 150 180 290 220 450 HFE - Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Voltage ( IC= 2.0 mA, VCE= 5.0V ) ( IC= 10 mA, VCE= 5.0V ) VCE(sat) - - 0.25 0.60 V VBE(sat) - 0.7 0.9 - V VBE(on) 580 - 660 - 700 770 mV SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= 10 mA, VCE= 5.0 V, f=100 MHZ ) Output Capacitance ( VCB= 10 V, f=1.0 MHZ ) Noise Figure ( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ) fT 100 MHZ Cobo - - 4.5 pF NF - - 10 dB REV. : 0 Zowie Technology Corporation Zowie Technology Corporation BC846A,B hFE, NORMALIZED DC CURRENT GAIN 2.0 1.5 VCE = 10 V o TA= 25 C 1.0 0.9 0.8 TA= 25 C o 1.0 0.8 0.6 V, VOLTAGE ( VOLTS ) VBE(SAT) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 VCE(SAT) @ IC/IB = 10 0.4 0.3 0.2 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltage VCE, COLLECTOR EMITTER VOLTAGE ( V ) TA= 25 C IC = 10 mA IC = 20 mA IC = 50 mA o TEMPERATURE COEFFICIENT (mV / C) 2.0 IC = 200 mA 1.0 -55 C to +125 C o o o 1.6 1.2 1.6 IC = 100 mA 1.2 2.0 0.8 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 VB, 0.2 1.0 10 100 IB, BASE CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient 40 TA= 25 C o tT, CURRENT-GAIN-BANDWIDTH PRODUCT 600 500 VCE = 5 V o TA= 25 C C, CAPACITANCE ( pF ) 20 Cib 200 10 6.0 4.0 Cob 100 50 20 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Capacitances Figure 6. Current-Gain-Bandwidth Product REV. : 0 Zowie Technology Corporation