BC847A

Z owie Technology Corporation General Purpose Transistor NPN Silicon 3 BASE 1 2 2 EMITTER COLLECTOR 3 BC847A,B,C 1 SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BC847A=1E; BC847B=1F; BC847C=1G ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=10mA ) Collector-Emitter Breakdowe Voltage ( IC=10 uA, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uA ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. V(BR)CEO 45 - - Vdc V(BR)CES 50 - - Vdc V(BR)CBO V(BR)EBO 50 6.0 - - Vdc Vdc ICBO - - 15 5.0 nAdc uAdc REV. : 0 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Typ. Max. Unit ON CHARACTERISTICS DC Current Gain ( IC= 10 uA, VCE= 5.0 V ) BC847A BC847B BC847C HFE BC847A BC847B BC847C 110 200 420 180 290 520 90 150 270 220 450 800 ( IC= 2.0 mA, VCE= 5.0 V ) - Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Voltage ( IC= 2.0 mA, VCE= 5.0V ) ( IC= 10 mA, VCE= 5.0V ) VCE(sat) - - 0.25 0.60 V VBE(sat) - 0.7 0.9 - V VBE(on) 580 - 660 - 700 770 mV SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= 10 mA, VCE= 5.0 V, f=100 MHZ ) Output Capacitance ( VCB= 10 V, f=1.0 MHZ ) Noise Figure ( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ) fT 100 MHZ Cobo - - 4.5 pF NF - - 10 dB REV. : 0 Zowie Technology Corporation Zowie Technology Corporation BC847A,B,C hFE, NORMALIZED DC CURRENT GAIN 2.0 1.5 VCE = 10 V o TA= 25 C 1.0 0.9 0.8 TA= 25 C o 1.0 0.8 0.6 V, VOLTAGE ( VOLTS ) VBE(SAT) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 VCE(SAT) @ IC/IB = 10 0.4 0.3 0.2 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltage VCE, COLLECTOR EMITTER VOLTAGE ( V ) TA= 25 C IC = 10 mA IC = 20 mA IC = 50 mA o TEMPERATURE COEFFICIENT (mV / C) 2.0 IC = 200 mA 1.0 -55 C to +125 C o o o 1.6 1.2 1.6 IC = 100 mA 1.2 2.0 0.8 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 VB, 0.2 1.0 10 100 IB, BASE CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ) 10 TA= 25 C o 400 300 200 VCE = 10 V o TA= 25 C 7.0 C, CAPACITANCE ( pF ) 5.0 Cib 3.0 Cob 100 80 60 40 30 20 0.5 0.7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Capacitances Figure 6. Current-Gain-Bandwidth Product REV. : 0 Zowie Technology Corporation Zowie Technology Corporation BC847A,B,C hFE, DC CURRENT GAIN (NORMALIZED) 1.0 TA= 25 C VCE = 5 V o TA= 25 C o 0.8 2.0 1.0 0.5 V, VOLTAGE ( VOLTS ) VBE(SAT) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(SAT) @ IC/IB = 10 0.2 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 7. DC Current Gain Figure 8. "On" Voltage VCE, COLLECTOR EMITTER VOLTAGE ( V ) TA= 25 C IC = 200 mA IC = 100 mA o TEMPERATURE COEFFICIENT (mV / C) 2.0 -1.0 -55 C to +125 C o o o 1.6 -1.4 IC = 20 mA IC = 10 mA IC = 50 mA 1.2 -1.8 VB for VBE 0.8 -2.2 0.4 -2.6 VB, 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 -3.0 0.2 1.0 10 200 IB, BASE CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient REV. : 0 Zowie Technology Corporation