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CSCD510H

CSCD510H

  • 厂商:

    ZOWIE(智威)

  • 封装:

  • 描述:

    CSCD510H - Schottky Barrier Diode - Zowie Technology Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
CSCD510H 数据手册
ZOWIE CSCD52H THRU CSCD510H FEATURES * * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Diode (20V~100V / 5.0A) OUTLINE DIMENSIONS Case : 3220 Unit : mm 0.05 ± 0.005 8.0 ± 0.1 8± R0. 0.02 5.0 ± 0.1 APPLICATION * * * * * Switching mode power supply applications Portable equipment battery applications High frequency rectification DC / DC Converter Telecommunication 1.95 ± 0.1 3.90 Typ. 1.95 ± 0.1 JEDEC : DO-214AB MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Laser Cathode band marking Weight : 0.093 gram MARKING Cathode mark Series code CSCD 5. Amps class 1.05 ± 0.15 Halogen-free type Voltage class PACKING * 3,000 pieces per 13" (330mm ± 2mm) reel * 1 reels per box * 5 boxes per carton Absolute Maximum Ratings (Ta = 25 C) CSCD ITEM Repetitive peak reverse voltage Average forward current (SEE FIG.1) Peak forward surge current Operating junction temperature Range Storage temperature Range o Symbol VRRM IF(AV) IFSM Tj TSTG o Conditions 52H 20 54H 40 5.0 56H 60 510H 100 Unit V A A 8.3ms single half sine-wave 140 -55 to +125 -55 to +150 -55 to +150 o o C C Electrical characteristics (Ta = 25 C) ITEM Symbol IF = 1 A IF = 3 A IF = 5 A Forward voltage (NOTE 1) VF IF = 1 A IF = 3 A IF = 5 A IF = 1 A IF = 3 A IF = 5 A Repetitive peak reverse current Junction capacitance Thermal resistance IRRM Cj Rth(JA) Rth(JL) NOTES : (1) Pulse test width PW=300usec , 1% duty cycle. (2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas. (3) Preliminary draft. Conditions Type CSCD52H / CSCD54H CSCD56H Min. - Typ. 0.38 0.45 0.52 0.42 0.52 0.65 0.53 0.69 0.79 0.045 180 55 17 Max. 0.55 0.70 0.85 0.50 - Unit V V CSCD510H V mA pF o o VR = Max. VRRM , Ta = 25 oC VR = 4V, f = 1.0 MHz Junction to ambient (NOTE 2) Junction to lead (NOTE 2) C/W C/W REV. 2 2009/05 ZOWIE CSCD52H THRU CSCD510H (20V~100V/5.0A) FIG.1 - FORWARD CURRENT DERATING CURVE 6.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 160 8.3ms Single Half Sine-Wave 5.0 120 4.0 CSCD56H & CSCD510H 3.0 2.0 CSCD52H & CSCD54H 80 40 1.0 0 0 50 70 90 110 130 o 0 150 170 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 10 1.0 TJ=100 C o 1 0.10 0.10 0.01 TJ=25 C o CSCD52H & CSCD54H CSCD56H CSCD510H 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 .001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 400 JUNCTION CAPACITANCE, pF TJ = 25 C f=1.0MHz Vsig=50mVP-P o 100 10 .1 1.0 10 100 REVERSE VOLTAGE, VOLTS REV. 2 2009/05
CSCD510H
1. 物料型号: - CSCD52H、CSCD54H、CSCD56H、CSCD510H

2. 器件简介: - 这些是肖特基势垒二极管,具有无卤型、无铅产品、共面与无铅芯片形式、无铅损伤、无铅焊点、无线键合和无铅框架等特点。它们具有低功耗、高效率、高电流能力和低正向电压降(VF)。

3. 引脚分配: - 引脚为纯锡镀层(无铅),可按照MIL-STD-750方法2026进行焊接。

4. 参数特性: - 重复峰值反向电压(VRRM):20V至100V不等。 - 平均正向电流(IF(AV)):5.0A。 - 峰值正向浪涌电流(IFSM):8.3ms单半正弦波形,140A。 - 工作结温范围(T):-55至+125或+150摄氏度。 - 存储温度范围(TSTG):-55至+150摄氏度。

5. 功能详解: - 正向电压(VF):不同型号有不同的正向电压范围。 - 重复峰值反向电流(IRRM):0.045至0.50mA。 - 结电容(CI):180pF。 - 热阻(Rth(JA)和Rth(JL)):分别为55°C/W和17°C/W。

6. 应用信息: - 开关模式电源应用、便携设备电池应用、高频反射DC/DC转换器、电信等领域。

7. 封装信息: - 封装尺寸为3220,采用FRP基板和环氧树脂填充,终端为纯锡镀层(无铅),符合MIL-STD-750方法2026的可焊性。极性为激光阴极带标记,重量为0.093克,3000件每13英寸(330mm±2mm)的卷轴,1卷轴每盒,5盒每箱。
CSCD510H 价格&库存

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