LL4148GH

Zowie Technology Corporation SILICON EPITAXIAL PLANAR DIODE LL4148GH Halogen-free type Lead free product fast switching diode in MiniMELF case especially suited for automatic surface mounting LL-34 (SOD-80) 3.50 ± 0.20 ψ1.45 ± 0.05 Cathode Mark 0.30 ± 0.10 Glass case Mini MELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs Symbol VRM VR IF(AV) IFSM Ptot Tj TS Value 100 75 200 0.5 1 4 500 1) Unit V V mA A mW O Power Dissipation Junction Temperature Storage Temperature Range 1) 175 - 65 to + 175 C C O Valid provided that electrodes are kept at ambient temperature. REV. 0 Zowie Technology Corporation Zowie Technology Corporation Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Symbol VF Min. - Max. 1 Unit V IR IR IR V(BR)R Ctot Vfr trr RthA ηV 100 - 25 5 50 4 nA µA µA V pF - 2.5 V 0.45 4 0.35 1) - ns K/mW - Valid provided that electrodes are kept at ambient temperature. VRF =2V 2nF 60 5K ~ ~ ~ Rectification Efficiency Measurement Circuit REV. 0 Vo Zowie Technology Corporation Z owie Technology Corporation Forward characteristics Dynamic forward resistance versus forward current 10 3 10 4 5 2 Tj=25 oC f=1KHz 10 2 iF 10 o Tj=100 C o Tj=25 C 10 3 rf 5 2 10 2 1 5 2 10 -1 10 5 2 10 -2 0 1 VF 2V 1 10 -2 10 -1 1 10 IF 10 2 mA Admissible power dissipation versus ambient temperature Valid provided that electrodes are kept at ambient temperature Relative capacitance versus reverse voltage mW 1000 900 800 700 600 500 400 300 200 100 0 0 100 Tamb o Tj=25 oC f=1MHz 1.1 Ctot(VR ) Ctot(0V) 1.0 P tot 0.9 0.8 0.7 0 0 2 4 6 VR 8 10 V 200 C REV. 0 Zowie Technology Corporation Z owie Technology Corporation SILICON EPITAXIAL PLANAR DIODE Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 5 4 3 2 I v=tp/T T=1/fp IFRM tp t T 10 IFRM v=0 5 4 3 2 0.1 0.2 1 5 4 3 2 0.5 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp Leakage current versus junction temperature nA 10 4 5 2 10 3 IR 5 2 10 2 5 2 10 5 2 VR=20V 1 0 100 Tj 200 C o REV. 0 Zowie Technology Corporation