LL4448

LL4148, LL4448 SILICON EPITAXIAL PLANAR DIODES Reverse Voltage 100 Volts SOD-80 Peak Forward Current - 500mA Cathode Indification FEATURES 0.063(1.60) 0.055(1.40) 0.012(0.30) 0.146(3.70) 0.130(3.30) * Electrical data identical with the devices 1N4148 * and 1N4448 respectively * Extreme fast switches MECHANICAL DATA Glass case Mini MELF / SOD 80 JEDEC DO 213AA technical drawings accarding to DIN specifications Case : Mini MELF SOD-80 Glass Case Weight : approx. 0.05 gram *Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS ( TJ=25 C ) PARAMETER Repetitive Peak Reverse Voltage Reverse Voltage Peak Forward Surge Current Repetitive Peak Forward Current Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range VR = 0 tp = 1 us Test Conditions SYMBOL VRRM VR IFSM IFRM IF IFAV PV TJ TSTG VALUE 100 75 2 500 300 150 500 175 -65 to +175 o o UNIT V V A mA mA mA mW o o C C MAXIMUM THERMAL RESISTANCE ( TJ=25 C ) PARAMETER Junction Ambient TEST CONDITIONS on PC Board 50mm x 50mm x 1.6mm SYMBOL R JA o VALUE 500 UNIT K/W MAXIMUM THERMAL RESISTANCE ( TJ=25 C ) PARAMETER TEST CONDITIONS ( IF = 5 mA ) ( IF = 50 mA ) ( IF = 100 mA ) ( Type : LL4448 ) ( Type : LL4148 ) ( Type : LL4448 ) SYMBOL VF MIN. 0.62 100 45 TYP. 0.86 0.93 MAX. 0.72 1.0 1.0 25 50 5.0 4 8 4 UNIT Volts nAdc uAdc Volts pF % nS Forward Voltage Reverse Current ( VR = 2 0 V ) o ( VR = 20 V, TJ=150 C ) ( VR = 7 5 V ) ( IR = 100 uA, tp/T = 0.01, tp = 0.3 ms ) ( VR = 0, f=1.0MHz, VHF = 50mV ) ( VHF = 2 V, f = 100MHZ ) ( IF = IR = 10mA, IR = 1mA ) ( IF = 10mA, VR = 6 V, IR = 0.1 X IR, RL = 100 ) IR V(BR) CD r trr Breakdown Voltage Diode Capacitance Rectification Efficiency Reverse Recovery Time REV. : 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES LL4148, LL4448 FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE 1000 1000 FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE LL4148 LL4448 IF - FORWARD CURRENT ( mA ) IF - FORWARD CURRENT ( mA ) 100 100 Scattering Limit Scattering Limit 10 10 TJ = 25oC 1 1 TJ = 25oC 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - FORWARD VOLTAGE ( V ) 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - FORWARD VOLTAGE ( V ) FIG.3 - REVERSSE CURRENT VS. REVERSE VOLTAGE 1000 3.0 FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 2.5 TJ = 25oC CD - DIODE CAPACITANCE ( pF ) IR - REVERSE CURRENT ( nA ) 100 2.0 1.5 Scattering Limit 10 1.0 0.5 1 1 0 VR - REVERSE VOLTAGE ( V ) 100 0 0.1 1 10 VR - REVERSE VOLTAGE ( V ) 100 REV. : 0 Zowie Technology Corporation