MMBT2222A

Z owie Technology Corporation General Purpose Transistor NPN Silicon 3 COLLECTOR 3 BASE 1 2 MMBT2222A 1 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBT2222A=1P ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=10mAdc, IB=0 ) Collector-Emitter Breakdowe Voltage ( IC=10uAdc, IE=0 ) Emitter - Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) Collector Cutoff Current ( VCE=60 Vdc, VEB (off)=3.0 Vdc ) Collector Cutoff Current ( VCB=60 Vdc, IE=0 ) o ( VCB=60 Vdc, IE=0, TA=125 C ) Emitter Cutoff Current ( VEB=3.0 Vdc, IC=0 ) Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. REV. : 0 Zowie Technology Corporation V(BR)CEO V(BR)CBO V(BR)EBO ICEX 40 75 6.0 - 10 Vdc Vdc Vdc nAdc ICBO - 0.01 10 100 20 uAdc IEBO IBL nAdc nAdc Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS(3) DC Current Gain ( IC=0.1 mAdc, VCE=10 Vdc ) ( IC=1.0 mAdc, VCE=10 Vdc ) ( IC=10 mAdc, VCE=10 Vdc ) o ( IC=10 mAdc, VCE=10 Vdc, TA=-55 C ) (3) ( IC=150 mAdc, VCE=10 Vdc ) (3) ( IC=150 mAdc, VCE=1.0 Vdc ) (3) ( IC=500 mAdc, VCE=10 Vdc ) Collector-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) Base-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) (3) (3) HFE 35 50 75 35 100 50 40 - 300 0.3 1.0 - VCE(sat) Vdc VBE(sat) 0.6 - 1.2 2.0 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=20 mAdc, VCE=20 Vdc, f=100 MHZ ) Output Capacitance ( VCB=10 Vdc, IE=0, f=1.0 MHZ ) Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) Collector Base Time Constant ( VCB=10 Vdc, IC=100 uAdc, RS = 1.0 k ohms, f=1.0 kHZ ) Noise Figure ( VCE=10 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) (4) fT Cobo Cibo 300 - 8.0 25 MHZ pF pF hie 2.0 0.25 50 75 5.0 25 - 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 k ohms hre X 10 -4 hfe - hoe u mhos rb, Cc NF ps dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ( VCC=30 Vdc, VBE (off) = -0.5 Vdc, IC =150 mAdc, IB1 = 15 mAdc ) ( VCC=30 Vdc, IC = 150 mAdc, IB1 =IB2 = 15 mAdc ) td tr ts tf 10 25 225 60 nS nS (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. (2) fT is defined as the frequency at which hfe extrapolates to unity. REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2222A SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V 1.0 to 100 us, DUTY CYCLE = 2% 1.0 k 0 -2.0 V < 2.0 ns Scope rise time < 4.0 ns * Total shunt capacitance of test jig and connectors 0 CS* < 10 pF* -14 V < 20 ns 1N914 200 +16 V 1.0 to 100 us, DUTY CYCLE = 2% 1.0 k +30 V 200 +16 V CS* < 10 pF* -4.0V Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT ( mA ) Figure 3. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT ( mA ) Figure 4. Collector Saturation Region REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2222A 200 100 70 50 IC/B = 10 o TJ= 25 C 500 300 200 100 VCC=30 V IC/IB=10 IB1=IB1 o TJ= 25 C t, TIME ( nS ) t, TIME ( nS ) 500 30 20 10 7.0 5.0 tr @ VCC=30V td @ VEB(off)=2.0V td @ VEB(off)=0 70 50 30 20 10 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn - On Time Figure 6. Turn - Off Time 10 IC =1.0mA, RS=150 500uA, RS=200 100uA, RS=2.0k 50uA, RS=4.0k RS =OPTIMUM SOURCE RESISTANCE 10 f=1.0kHz 8.0 NF, NOISE FIGURE ( dB ) 8.0 IC =50uA NF, NOISE FIGURE ( dB ) 6.0 6.0 100uA 4.0 4.0 500uA 1.0mA 2.0 2.0 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY ( kHZ ) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 20 tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ) 500 VCE = 10 V o TA= 25 C 300 CAPACITANCE ( pF ) Ceb 10 7.0 5.0 Ccb 200 100 70 50 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2222A 1.0 TJ= 25 C o +0.5 0 0.8 R VC for VCE(sat) V, VOLTAGE ( VOLTS ) 0.6 VBE(on) @ VCE=10V o VBE(sat) @ IC/IB=10 COEFFICIENT ( mV/ C ) 1.0 V -0.5 -1.0 0.4 -1.5 R VB for 0.2 VCE(sat) @ IC/IB=10 VBE -2.0 -2.5 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. " On " Voltage Figure 12. Temperature Coefficients REV. : 0 Zowie Technology Corporation