MMBT2907A

Z owie Technology Corporation General Purpose Transistor PNP Silicon 3 COLLECTOR 3 BASE 1 2 MMBT2907A 1 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBT2907A=2F ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage(3) ( IC= -1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= -10uAdc, IE=0 ) Emitter - Base Breakdowe Voltage ( IE= -10 uAdc, IC=0 ) Collector Cutoff Current ( VCE= -30 Vdc, VBE (off)= -0.5 Vdc ) Collector Cutoff Current ( VCB= -50 Vdc, IE=0 ) o ( VCB= -50 Vdc, IE=0, TA=125 C ) Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle V(BR)CEO V(BR)CBO V(BR)EBO ICEX -60 -60 -5.0 - -50 Vdc Vdc Vdc nAdc ICBO - -0.010 -10 -50 uAdc IB nAdc 2.0%. REV. : 0 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS DC Current Gain ( IC= -0.1 mAdc, VCE= -10 Vdc ) ( IC= -1.0 mAdc, VCE= -10 Vdc ) ( IC= -10 mAdc, VCE= -10 Vdc ) (3) ( IC= -150 mAdc, VCE= -10 Vdc ) (3) ( IC= -500 mAdc, VCE= -10 Vdc ) Collector-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) Base-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) (3) (3) HFE 75 100 100 100 50 300 - - VCE(sat) - -0.4 -1.6 Vdc VBE(sat) - -1.3 -2.6 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= -50 mAdc, VCE= -20 Vdc, f=100 MHZ ) Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0 MHZ ) Input Capacitance ( VEB= -2.0 Vdc, IC=0, f=1.0 MHZ ) (3),(4) fT 200 - MHZ Cobo - 8.0 pF Cibo - 30 pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-On Time Storage Time Fall Time (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. (2) fT is defined as the frequency at which hfe extrapolates to unity. ( VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc ) ton td tr toff ts tf - 45 10 40 100 80 30 nS nS ( VCC= -6.0 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc ) INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS 1.0 k 0 -16V 50 -30 V 200 INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS 1.0 k 0 -30 V +15 V -6.0V 1.0 k 37 TO OSCILLOSCOPE RISE TIME 5.0nS TO OSCILLOSCOPE RISE TIME 5.0nS 1N916 50 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2907A TYPICAL CHARACTERISTICS 3.0 hFE, NORMALIZED CURRETN GAIN 2.0 TJ = 125 C o o VCE= -10 V TJ = 25 C 1.0 0.7 0.5 TJ = -55 C o 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT ( mA ) Figure 3. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = 1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IB, BASE CURRENT ( mA ) Figure 4. Collector Saturation Region 300 200 tr VCC= -30 V IC/IB= 10 o TJ= 25 C 500 300 200 100 tf VCC = -30 V IC/IB = 10 IB1 = IB2 o TJ = 25 C 100 70 t,TIME ( nS ) t,TIME ( nS ) 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 td @ VBE(off) = 0V 70 50 t'S = tS - 1/8 tf 30 20 2.0 V 10 7.0 5.0 -200 -300 -500 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn - On Time Figure 6. Turn - Off Time REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2907A 10 RS =OPTIMUM SOURCE RESISTANCE 10 f=1.0kHz NF, NOISE FIGURE ( dB ) 8.0 8.0 6.0 IC = -1.0mA, RS=430 -500uA, RS=560 -50uA, RS=2.7k -100uA, RS=1.6k NF, NOISE FIGURE ( dB ) 6.0 IC = -50 uA -100 uA -500 uA -1.0 mA 4.0 4.0 2.0 2.0 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY ( kHz ) RS, SOURCE RESISTANCE ( OHMS ) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 20 Ceb 400 300 VCE = -20 V o TJ = 25 C C, CAPACITANCE ( pF ) 10 7.0 5.0 Ccb NF, NOISE FIGURE ( dB ) 200 100 80 60 40 30 20 -1.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product -1.0 +0.5 TJ= 25 C VBE(sat) @ IC/IB = 10 o 0 V, VOLTAGE ( VOLTS ) COEFFICIENT ( mV / C ) -0.8 VBE(on) @ ICE = -10V R VC for VCE(sat) o -0.5 -0.6 -1.0 -0.4 -1.5 R VB for -0.2 VCE(sat) @ IC/IB = 10 -2.0 -2.5 -0.1 VBE 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure11. " On " Voltage Figure 12. Temperature Coefficients REV. : 0 Zowie Technology Corporation