MMBT4403GH

Z owie Technology Corporation Switching Transistor PNP Silicon Lead free product Halogen-free type 3 3 COLLECTOR MMBT4403GH 1 2 1 BASE 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value - 40 - 40 - 5.0 - 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC= -1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= -0.1 mAdc, IE=0 ) Emitter-Base Breakdowe Voltage ( IE= -0.1 mAdc, IC=0 ) Base Cutoff Current ( VCE= -35 Vdc, VEB= -0.4 Vdc ) Collector Cutoff Current ( VCE= -35 Vdc, VEB= -0.4 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width≦300uS, Duty Cycle≦2.0%. REV. 0 Zowie Technology Corporation (3) V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBEV - -0.1 Adc ICEX - -0.1 Adc Zowie Technology Corporation MMBT4403GH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit (3) o ON CHARACTERISTICS DC Current Gain ( IC=-0.1 mAdc, VCE=-1.0 Vdc ) ( IC=-1.0 mAdc, VCE=-1.0 Vdc ) ( IC=-10 mAdc, VCE=-1.0 Vdc ) (3) ( IC=-150 mAdc, VCE=-2.0 Vdc ) (3) ( IC=-500 mAdc, VCE=-2.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=-150 mAdc, IB=-15 mAdc ) ( IC=-500 mAdc, IB=-50 mAdc ) Base-Emitter Saturation Voltage ( IC=-150 mAdc, IB=-15 mAdc ) ( IC=-500 mAdc, IB=-50 mAdc ) (3) (3) HFE 30 60 100 100 20 -0.75 - 300 -0.4 -0.75 -0.95 -1.3 - VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=-20 mAdc, VCE=-10 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB=-10Vdc, IE=0, f=1.0 MHZ ) Emitter-Base Capacitance ( VBE=-0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) Voltage Feedback Ratio ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) Small-Signal Current Gain ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) Output Admittance ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) fT Ccb Ceb hie hre hfe hoe 200 1.5 0.1 60 1.0 8.5 30 15 8.0 500 100 MHZ pF pF k ohms -4 X 10 - mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ( VCC=-30 Vdc, VEB=-2.0 Vdc, IC=-150 mAdc, IB1=-15 mAdc ) ( VCC=-30 Vdc, IC=-150 mAdc, IB1=IB2=-15 mAdc ) 300uS, Duty Cycle 2.0%. td tr ts tf - 15 20 225 30 nS nS (3) Pulse Test : Pulse Width SWITCHING TIME EQUIVALENT TEST CIRCUITS -30 V 200 +2.0 V 0 CS* < 10 pF* 1.0 to 100 us, DUTY CYCLE = 2% < 2.0 ns < 20 ns 1.0 k 0 +14 V 1.0 k 1N916 CS* < 10 pF* +4.0V -30 V 200 -16 V -16 V 1.0 to 100 us, Scope rise time < 4.0 ns DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time REV. 0 Figure 2. Turn-Off Time Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 100°C 30 20 10 7.0 5.0 3.0 2.0 C eb Q, CHARGE (nC) V CC = 30 V I C / I B = 10 CAPACITANCE (pF) 10 7.0 5.0 1.0 0.7 0.5 0.3 C cb QT QA 3.0 2.0 0.1 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 100 70 50 100 Figure 4. Charge Data I C /I B = 10 t r, RISE TIME (ns) 70 50 V CC= 30V I C / I B =10 t , TIME (ns) 30 20 t r @V CC=30V t r @V CC=10V t d@VBE(off) = 2.0V t d@VBE(off) = 0V 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time 200 Figure 6. Rise Time I C/I B = 20 t s , RISE TIME (ns) 100 I C/I B = 10 70 50 t s’ = t s – 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time REV. 0 Zowie Technology Corporation Zowie Technology Corporation SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = –10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 MMBT4403GH f = 1.0 kHz 8 8 NF, NOISE FIGURE (dB) 6 I C = 1.0 mA, R S = 430Ω I C = 500 μA, R S = 560Ω I C = 50 μ A, R S = 2.7kΩ I C = 100 μA, R S = 1.6 kΩ NF, NOISE FIGURE (dB) 6 4 4 I C = 50μA 100μA 500μA 1.0 mA 2 RS = OPTIMUM 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1k 2k 5k 10k 20k 50k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (Ω) Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 1000 100 500 h ie, INPUT IMPEDANCE (kΩ) 700 50 20 10 5 2 1 0.5 0.2 0.1 MMBT4403G UNIT 1 MMBT4403G UNIT 2 h fe, CURRENT GAIN 300 200 100 70 50 MMBT4403G UNIT 1 MMBT4403G UNIT 2 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mAdc) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain h oe , OUTPUT ADMITTANCE (μmhos) 20 10 5.0 2.0 1.0 0.5 500 Figure 11. Input Impedance MMBT4403LG UNIT 1 MMBT440G UNIT 2 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 MMBT4403G UNIT 1 MMBT4403LG UNIT 2 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio REV. 0 Figure 13. Output Admittance Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 V CE= 1.0 V V CE= 10 V T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) Figure 14. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region 10 + 0.5 T J = 25°C V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ °C) 0.8 0 θVC for VCE(sat) V, VOLTAGE ( VOLTS ) – 0.5 0.6 V BE @ V CE =1.0 V –1.0 0.4 –1.5 0.2 –2.0 V CE(sat) @ I C /I B =10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 θVS for V BE – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients REV. 0 Zowie Technology Corporation