MMBT5401

Z owie Technology Corporation High Voltage Transistor PNP Silicon 3 BASE 1 2 2 EMITTER COLLECTOR 3 MMBT5401 1 SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -150 -160 -5.0 -500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBT5401=2L ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC = 1.0mAdc, IB = 0 ) V(BR)CEO -150 Vdc Collector-Base Breakdowe Voltage ( IC = -100 uAdc, IE = 0 ) V(BR)CBO -160 - Vdc Emitter-Base Breakdowe Voltage ( IE = -10 uAdc, IC = 0 ) Collector Cutoff Current ( VCE= -120 Vdc, IE = 0 ) ( VCE= -120 Vdc, IE = 0, TA = 100 C ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. o V(BR)EBO -5.0 - Vdc ICES - -50 -50 nAdc uAdc REV. : 0 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS DC Current Gain ( IC= -1.0 mAdc, VCE= -5.0 Vdc ) ( IC= -10 mAdc, VCE= -5.0 Vdc ) ( IC= -50 mAdc, VCE= -5.0 Vdc ) Collector-Emitter Saturation Voltage ( IC= -10 mAdc, IB= -1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc ) Base-Emitter Saturation Voltage ( IC= -10 mAdc, IB= -1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc ) HFE 50 60 50 240 - - VCE(sat) - -0.2 -0.5 Vdc VBE(sat) - -1.0 -1.0 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= -10 mAdc, VCE= -10 Vdc, f=100 MHZ ) Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0 MHZ ) Small-Signal Current Gain ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 MHZ ) Noise Figure ( VCE= -5.0 Vdc, IC= -200 uAdc, RS= 10 ohms, f=1.0 kHZ ) fT 100 300 MHZ Ccb - 6.0 pF hfe 40 200 - NF - 8.0 dB REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT5401 200 hFE, NORMALIZED CURRENT GAIN 150 TJ = 125 C o 100 TJ = 25 C o 70 50 o TJ = 55 C 30 VCE = -1.0 V VCE = -5.0 V 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 1.0mA IC = 10mA IC = 30mA IC = 100mA TJ= 25 C o IB, BASE CURRENT ( mA ) Figure 2. Collector Saturation Region 10 3 IC, COLLECTOR CURRENT (uA) 10 10 10 2 VCE = 30 V IC = ICES 1 TJ = 125 C 0 o 10 10 -1 TJ = 75 C o -2 REVERSE o TJ = 25 C FORWARD 10 -3 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VBE, BASE - EMITTER VOLTAGE (VOLTS) Figure 18. Temperature Coefficients REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT5401 TEMPERATURE COEFFICIENTS (mV / C) 1.0 TJ= 25 C o 2.5 2.0 1.5 1.0 0.5 0.9 TJ= -55 C to 135 C o o V, VOLTAGE ( VOLTS ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE(SAT) @ IC/IB = 10 VBE(SAT) @ IC/IB = 10 o VC for VCE(sat) 0 -0.5 -1.0 -1.5 VB 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 for VBE(sat) V, -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 4. " On " Voltages Figure 5. Temperature Coefficients 100 VBB + 8.8V 10.2V 100 Vin 0.25 uF 3.0 k RC Vout 10 uS INPUT PULSE 5.1 k tr, tf 10 nS Vin 100 1N914 RB VCC -30 V 70 50 TJ= 25 C o C, CAPACITANCE ( pF ) 30 20 10 7.0 5.0 Cobo Cibo 3.0 2.0 1.0 0.2 DUTY CYCLE = 1.0% 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VALUES SHOWN ARE FOR IC @ 10 mA VR, REVERSE VOLTAGE ( VOLTS ) Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 700 500 300 IC/IB = 10 o TJ= 25 C tr @ VCC = 120 V 2000 1000 700 500 IC/IB = 10 o TJ= 25 C tf @ VCC = 120 V t, TIME ( nS ) 200 100 70 50 30 20 10 0.2 0.3 0.5 td @ VBE(off) = 1.0 V VCC = 120 V tf @ VCC = 30 V t, TIME ( nS ) tr @ VCC = 30 V 300 200 100 70 50 30 tf @ VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 8. Turn - On Time Figure 9. Turn - Off Time REV. : 0 Zowie Technology Corporation