MMBTA42

Z owie Technology Corporation High Voltage Transistor NPN Silicon 3 COLLECTOR 3 BASE 1 2 MMBTA42 1 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 6.0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBTA42=1D ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage(3) ( IC= 1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= 100uAdc, IE=0 ) Emitter - Base Breakdowe Voltage ( IE= 100 uAdc, IC=0 ) Collector Cutoff Current ( VCE= 200 Vdc, IE = 0 ) Emitter Cutoff Curretn ( VEB= 6.0 Vdc, IC=0 ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle V(BR)CEO 300 - Vdc V(BR)CBO 300 - Vdc V(BR)EBO 6.0 - Vdc ICBO - 0.1 uAdc IEBO - 0.1 uAdc 2.0%. REV. : 0 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS (3) DC Current Gain ( IC= 1.0 mAdc, VCE= 10 Vdc ) ( IC= 10 mAdc, VCE= 10 Vdc ) ( IC= 30 mAdc, VCE= 10 Vdc ) HFE 25 40 40 - - Collector-Emitter Saturation Voltage ( IC= 20 mAdc, IB= 2.0 mAdc ) VCE(sat) - 0.5 Vdc Base-Emitter Saturation Voltage ( IC= 20 mAdc, IB= 2.0 mAdc ) VBE(sat) - 0.9 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= 10 mAdc, VCE= 20 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB= 20 Vdc, IE=0, f=1.0 MHZ ) (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. fT 50 - MHZ Ccb - 3.0 pF REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBTA42 120 TJ = +125 C o VCE = 10 Vdc 100 hFE, DC CURRETN GAIN 80 TJ = 25 C o 60 40 TJ = -55 C o 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 1. DC Current Gain 100 80 tT, CURRENT-GAIN-BANDWIDTH (MHz) Ceb @ 1MHz 70 60 50 40 30 20 10 1.0 VCE=20 V f=20MHz o TJ= 25 C C, CAPACITANCE ( pF ) 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 1000 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VR, REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 2. Capacitance Figure 3. Current-Gain-Bandwidth 1.4 1.2 VCE(sat) @ 25 C, IC/IB = 10 VCE(sat) @ 125 C, IC/IB = 10 o o V, VOLTAGE ( VOLTS ) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ -55 C, IC/IB = 10 VBE(sat) @ 25 C, IC/IB = 10 VBE(sat) @ 125 C, IC/IB = 10 VBE(sat) @ -55 C, IC/IB = 10 VBE(on) @ 25 C, VCE = 10 V VBE(on) @ 125 C, VCE = 10 V VBE(on) @ -55 C, VCE = 10 V o o o o o o o 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 4. "On" Voltages REV. : 0 Zowie Technology Corporation