5.0SMDJ36CA

5.0SMDJ11(C)A - 5.0SMDJ170(C)A Product specification 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Features  For surface mounted applications in order to optimize board space  Low profile package  Built-in strain relief  Glass passivated junction  Low inductance  Excellent clamping capability Mechanical Data  Case: JEDEC DO-214AB. Molded plastic over glass passivated junction  Terminal: Solder plated, solderable per MIL-STD-750, Method 2026  Polarity: Color band denotes cathode except bi-directional models  Standard Packaging: 16mm tape (EIA STD RS-481)  Weight: 0.30g  5000W peak pulse power capability at 10/1000μswaveform, repetition rate (duty cycle): 0.01% Applications  Fast response time  Typical IR less than 2μA above 22V  High Temperature soldering: 260℃/10 seconds at terminals  Plastic package has underwriters laboratory flammability 94V-0  Meets MSL level 1, per J-STD-020  Safety certification:  I/O interface  AC/DC power supply  Low frequency signal transmission line (RS232, RS485, etc.) UL: E244458 Reference News PACKAGE OUTLINE PIN CONFIGURATION SMC(DO-214AB) Unipolar SMC(DO-214AB) Bipolar Copyright© Msksemi Incorporated www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 5000 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 6.5 Watts IFSM 300 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 15 ℃/W Typical thermal resistance junction to ambient RθJA 75 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Range. Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2. 2. Mounted on 8.0mm×8.0mm copper pads to each terminal. 3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minutes maximum. Electrical Characteristics (TA=25℃) Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Reverse Pulse Leakage Current @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) 5.0SMDJ11A 5.0SMDJ11CA 5PEN 5BEN 11.0 12.20~13.50 10 18.2 275.00 800 5.0SMDJ12A 5.0SMDJ12CA 5PEP 5BEP 12.0 13.30~14.70 10 19.9 252.00 800 5.0SMDJ13A 5.0SMDJ13CA 5PEQ 5BEQ 13.0 14.40~15.90 10 21.5 233.00 500 5.0SMDJ14A 5.0SMDJ14CA 5PER 5BER 14.0 15.60~17.20 10 23.2 216.00 200 5.0SMDJ15A 5.0SMDJ15CA 5PES 5BES 15.0 16.70~18.50 1 24.4 205.00 100 5.0SMDJ16A 5.0SMDJ16CA 5PET 5BET 16.0 17.80~19.70 1 26.0 193.00 50 5.0SMDJ17A 5.0SMDJ17CA 5PEU 5BEU 17.0 18.90~20.90 1 27.6 181.00 20 5.0SMDJ18A 5.0SMDJ18CA 5PEV 5BEV 18.0 20.00~22.10 1 29.2 172.00 10 5.0SMDJ20A 5.0SMDJ20CA 5PEW 5BEW 20.0 22.20~24.50 1 32.4 155.00 5 5.0SMDJ22A 5.0SMDJ22CA 5PEX 5BEX 22.0 24.40~26.90 1 35.5 141.00 5 5.0SMDJ24A 5.0SMDJ24CA 5PEZ 5BEZ 24.0 26.70~29.50 1 38.9 129.00 2 5.0SMDJ26A 5.0SMDJ26CA 5PFE 5BFE 26.0 28.90~31.90 1 42.1 119.00 2 5.0SMDJ28A 5.0SMDJ28CA 5PFG 5BFG 28.0 31.10~34.40 1 45.4 110.00 2 5.0SMDJ30A 5.0SMDJ30CA 5PFK 5BFK 30.0 33.30~36.80 1 48.4 103.00 2 Copyright© Msksemi Incorporated www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Part Number Unidirectional Bidirectional Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Reverse Pulse Leakage Current @ VRWM UNI BI VRWM(V) VBR(V) IT(mA) VC(V) IPP(A) IR(μA) 5.0SMDJ33A 5.0SMDJ33CA 5PFM 5BFM 33.0 36.70~40.60 1 53.3 93.90 2 5.0SMDJ36A 5.0SMDJ36CA 5PFP 5BFP 36.0 40.00~44.20 1 58.1 86.10 2 5.0SMDJ40A 5.0SMDJ40CA 5PFR 5BFR 40.0 44.40~49.10 1 64.5 77.60 2 5.0SMDJ43A 5.0SMDJ43CA 5PFT 5BFT 43.0 47.80~52.80 1 69.4 72.10 2 5.0SMDJ45A 5.0SMDJ45CA 5PFV 5BFV 45.0 50.00~55.30 1 72.7 68.80 2 5.0SMDJ48A 5.0SMDJ48CA 5PFX 5BFX 48.0 53.30~58.90 1 77.4 64.70 2 5.0SMDJ51A 5.0SMDJ51CA 5PFZ 5BFZ 51.0 56.70~62.70 1 82.4 60.70 2 5.0SMDJ54A 5.0SMDJ54CA 5PGE 5BGE 54.0 60.00~66.30 1 87.1 57.50 2 5.0SMDJ58A 5.0SMDJ58CA 5PGG 5BGG 58.0 64.40~71.20 1 93.6 53.50 2 5.0SMDJ60A 5.0SMDJ60CA 5PGK 5BGK 60.0 66.70~73.70 1 96.8 51.70 2 5.0SMDJ64A 5.0SMDJ64CA 5PGM 5BGM 64.0 71.10~78.60 1 103.0 48.60 2 5.0SMDJ70A 5.0SMDJ70CA 5PGP 5BGP 70.0 77.80~86.00 1 113.0 44.30 2 5.0SMDJ75A 5.0SMDJ75CA 5PGR 5BGR 75.0 83.30~92.10 1 121.0 41.40 2 5.0SMDJ78A 5.0SMDJ78CA 5PGT 5BGT 78.0 86.70~95.80 1 126.0 39.70 2 5.0SMDJ85A 5.0SMDJ85CA 5PGV 5BGV 85.0 94.40~104.00 1 137.0 36.50 2 5.0SMDJ90A 5.0SMDJ90CA 5PGX 5BGX 90.0 100.00~111.00 1 146.0 34.30 2 5.0SMDJ100A 5.0SMDJ100CA 5PGZ 5BGZ 100.0 111.00~123.00 1 162.0 30.90 2 5.0SMDJ110A 5.0SMDJ110CA 5PHE 5BHE 110.0 122.00~135.00 1 177.0 28.30 2 5.0SMDJ120A 5.0SMDJ120CA 5PHG 5BHG 120.0 133.00~147.00 1 193.0 26.00 2 5.0SMDJ130A 5.0SMDJ130CA 5PHK 5BHK 130.0 144.00~159.00 1 209.0 24.00 2 5.0SMDJ150A 5.0SMDJ150CA 5PHM 5BHM 150.0 167.00~185.00 1 243.0 20.60 2 5.0SMDJ160A 5.0SMDJ160CA 5PHP 5BHP 160.0 178.00~197.00 1 259.0 19.30 2 5.0SMDJ170A 5.0SMDJ170CA 5PHR 5BHR 170.0 189.00~209.00 1 275.0 18.20 2 Notes: For bidirectional type having VRWM of 18V and less, the IR limit is double. Copyright© Msksemi Incorporated www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Ratings and Characteristic Curves (TA=25℃ unless otherwise noted) Figure 2. Pulse Derating Curve Peak Pulse Power (P PP ) or Current (I PP ) Derating in Percentage % Figure 1. Peak Pulse Power Rating Curve PPPM - Peak Pulse Power (kW) 1000 100 10 1 0.31×0.31 ″(8.0×8.0mm) Copper Pad Area 0.1 0.1 1 100 10 100 80 60 40 20 0 1000 0 td-Pulse Width (µs) 125 150 175 100000 Uni-directional 10000 Cj (pF) IPPM - Peak Pulse Current, %I RSM 100 Peak Value I PPM 100 Half Value I PPM (IPPM /2) 1000 Bi-directional 100 50 10/1000µs Waveform as defined by R.E.A 10 td 0 0 Measured at 1MHz, 100mV, 0V bias 1 1.0 2.0 3.0 1 4.0 t-Time (ms) Figure 5. Steady State Power Dissipation Derating IFSM - Peak Forward Surve Current (A) 6 5 4 3 2 1 0 25 1000 Surge Current Uni-Directional Only 7 0 10 100 VRWM -Reverse Stand-Off Voltage (V) Figure 6. Maximum Non-Repetitive Forward Curve PM(AV), Steady State Power Dissipation (W) 75 Figure 4. Typical Junction Capacitance TJ=25℃ Pulse Width(t d) is defined as the point where the peak current decays to 50% of I PPM tr=10µs 50 TA-Ambient Temperature ( ℃) Figure 3. Pulse Waveform 150 25 50 75 100 125 TA-Ambient Temperature ( ℃) Copyright© Msksemi Incorporated 150 175 350 300 250 200 150 100 50 0 1 10 Number of Cycles at 60Hz 100 www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up TL tL Temperature TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (tS) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate Time maintained above: -Temperature (TL) -Time (tL) Peak Temperature (TP) Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate Time 25℃ to Peak Temperature Copyright© Msksemi Incorporated 3℃/second max. 217℃ 60-150 seconds 260℃ 20-40 seconds 6℃/second max. 8 minutes max. www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Dimensions (SMC/DO-214AB) Product: Symbol Cathode Band D1 D L H1 H d T1 T 3.20mm Pad: 1.75mm 4.69mm 1.75mm Millimeters Inches Min. Max. Min. Max. L 6.60 7.11 0. 0. D 5.59 6.22 2600. 2800. D1 2.90 3.20 2200. 2450. T 7.75 8.13 1140. 1260. T1 0.76 1.52 3050. 3200. d - 0.203 030 - 0600. H 2.20 2.80 0.087 0080. H1 2.06 2.62 0.079 0.103 REELSPECIFICATION P/N PKG QTY 5.0SMDJ11(C)A - 5.0SMDJ170(C)A SMC 3000 Copyright© Msksemi Incorporated www.msksemi.com 5.0SMDJ11(C)A - 5.0SMDJ170(C)A Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com